KTC3203_15 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic-Encapsulated Transistor

SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURES
hComplementary to KTA1271.
KTC3203
EPITAXIAL PLANAR NPN TRANSISTOR
B
C
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Operating Temperature
V_CBO
V_CEO
V_EBO
I_C
I_E
P_C
T_j
T_opr
Storage Temperature Range
T_stg
RATING
35
30
5
800
-800
625
150
-40q85
-55q150
UNIT
V
V
V
mA
mA
mW



K
E
G
D
H
F
F
1 23
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
I_CBO
Emitter Cut-off Current
I_EBO
Collector-Emitter Breakdown Voltage
V_(BR)CEO
DC Current Gain
h_FE(1) (Note)
h_FE(2)
Collector-Emitter Saturation Voltage
V_CE(sat)
Base-Emitter Voltage
V_BE
Transition Frequency
f_T
Collector Output Capacitance
C_ob
Note : h_FE(1) Classification 0:100q200, Y:160q320
TEST CONDITION
V_CB=35V, I_E=0
V_EB=5V, I_C=0
I_C=10mA, I_B=0
V_CE=1V, I_C=100mA
V_CE=1V, I_C=700mA
I_C=500mA, I_B=20mA
V_CE=1V, I_C=10mA
V_CE=5V, I_C=10mA
V_CB=10V, I_E=0, f=1MHz
MIN.
-
-
30
100
35
-
0.5
-
-
TYP.
-
-
-
-
-
-
-
120
19
MAX.
100
100
-
320
-
0.5
0.8
-
-
UNIT
nA
nA
V
V
V
MHz
pF
2011. 4. 4
Revision No : 4
1/2