KTC3203A Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURES
Complementary to KTA1271A
KTC3203A
EPITAXIAL PLANAR NPN TRANSISTOR
B
C
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Operating Temperature
V_CBO
V_CEO
V_EBO
I_C
I_E
P_C
T_j
T_opr
Storage Temperature Range
T_stg
RATING
35
30
5
800
-800
400
150
-40 85
-55 150
UNIT
V
V
V
mA
mA
mW
K
E
G
D
H
F
F
1 23
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. EMITTER
2. COLLECTOR
3. BASE
TO-92 (F)
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Note : h_FE(1) Classification 0:100 200,
I_CBO
I_EBO
V_(BR)CEO
h_FE(1) (Note)
h_FE(2)
V_CE(sat)
V_BE
f_T
C_ob
Y:160 320
TEST CONDITION
V_CB=35V, I_E=0
V_EB=5V, I_C=0
I_C=10mA, I_B=0
V_CE=1V, I_C=100mA
V_CE=1V, I_C=700mA
I_C=500mA, I_B=20mA
V_CE=1V, I_C=10mA
V_CE=5V, I_C=10mA
V_CB=10V, I_E=0, f=1MHz
MIN.
-
-
30
100
35
-
0.5
-
-
TYP.
-
-
-
-
-
-
-
120
19
MAX.
100
100
-
320
-
0.5
0.8
-
-
UNIT
nA
nA
V
V
V
MHz
pF
2010. 1. 28
Revision No : 1
1/2