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KTC3202_15 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Excellent hFE Linearity
: hFE(2)=25(Min.) at VCE=6V, IC=400mA.
Complementary to KTA1270.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
IE
PC
Tj
Storage Temperature Range
Tstg
RATING
35
30
5
500
-500
625
150
-55 150
UNIT
V
V
V
mA
mA
mW
KTC3202
EPITAXIAL PLANAR NPN TRANSISTOR
B
C
K
E
G
D
H
F
F
1 23
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.30
+0.10
- 0.05
N
1.00
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
ICBO
IEBO
hFE(1) (Note)
hFE(2) (Note)
VCE(sat)
VBE
fT
VCB=35V, IE=0
VEB=5V, IC=0
VCE=1V, IC=100mA
VCE=6V, IC=400mA
IC=100mA, IB=10mA
VCE=1V, IC=100mA
VCE=6V, IC=20mA
Collector Output Capacitance
Cob
VCB=6V, IE=0, f=1MHz
Note : hFE(1) Classification 0:70 140, Y:120 240, GR:200~400
hFE(2) Classification 0:25Min., Y:40Min.
MIN.
-
-
70
25
-
-
-
-
TYP.
-
-
-
-
0.1
0.8
300
7.0
MAX.
0.1
0.1
400
-
0.25
1.0
-
-
UNIT
A
A
V
V
MHz
pF
2005. 7. 18
Revision No : 0
1/2