KTC3200_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
LOW NOISE AUDIO AMPLIFIER APPLICATION.
FEATURES
hThe KTC3200 is a transistor for low frequency and low noise applications.
This device is designed to ower noise figure in the region of low signal
source impedance, and to lower the pulse noise.
This is recommended for the first stages of equalizer amplifiers.
hLow Noise
: NF=4dB(Typ.), Rg=100ʃ, V_CE=6V, I_C=100ǺA, f=1kHz
: NF=0.5dB(Typ.), Rg=1kʃ, V_CE=6V, I_C=100ǺA, f=1kHz.
hLow Pulse Noise : Low 1/f Noise.
hHigh DC Current Gain : h_FE=200q700.
hHigh Breakdown Voltage : V_CEO=120V .
hComplementary to KTA1268.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
V_CBO
V_CEO
V_EBO
I_C
I_E
P_C
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
120
120
5
100
-100
625
150
-55q150
UNIT
V
V
V
mA
mA
mW


KTC3200
EPITAXIAL PLANAR NPN TRANSISTOR
B
C
K
E
G
D
H
F
F
1 23
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
I_CBO
I_EBO
V_(BR)CEO
h_FE(Note)
V_CB=120V, I_E=0
V_EB=5V, I_C=0
I_C=1mA, I_B=0
V_CE=6V, I_C=2mA
Collector-Emitter Saturation Voltage
V_CE(sat) I_C=10mA, I_B=1mA
Base-Emitter Voltage
V_BE
V_CE=6V, I_C=2mA
Transition Frequency
f_T
V_CE=6V, I_C=1mA
Collector Output Capacitance
C_ob
V_CB=10V, I_E=0, f=1MHz
V_CE=6V, I_C=100ǺA, f=10Hz, Rg=10kʃ
Noise Figure
NF
V_CE=6V, I_C=100ǺA, f=1kHz, Rg=10kʃ
V_CE=6V, I_C=100ǺA f=1kHz, Rg=100ʃ
Note : h_FE Classification GR:200q400, BL:350q700
MIN.
-
-
120
200
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
0.65
100
3.0
-
-
4.0
MAX.
100
100
-
700
0.3
-
-
-
6.0
2.0
-
UNIT
nA
nA
V
V
V
MHz
pF
dB
2003. 1. 15
Revision No : 1
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