English
Language : 

KTC3200_03 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR
SEMICONDUCTOR
TECHNICAL DATA
LOW NOISE AUDIO AMPLIFIER APPLICATION.
FEATURES
The KTC3200 is a transistor for low frequency and low noise applications.
This device is designed to ower noise figure in the region of low signal
source impedance, and to lower the pulse noise.
This is recommended for the first stages of equalizer amplifiers.
Low Noise
: NF=4dB(Typ.), Rg=100 , VCE=6V, IC=100 A, f=1kHz
: NF=0.5dB(Typ.), Rg=1k , VCE=6V, IC=100 A, f=1kHz.
Low Pulse Noise : Low 1/f Noise.
High DC Current Gain : hFE=200 700.
High Breakdown Voltage : VCEO=120V .
Complementary to KTA1268.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
IE
PC
Tj
Storage Temperature Range
Tstg
RATING
120
120
5
100
-100
625
150
-55 150
UNIT
V
V
V
mA
mA
mW
KTC3200
EPITAXIAL PLANAR NPN TRANSISTOR
B
C
K
E
G
D
H
F
F
1 23
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
ICBO
IEBO
V(BR)CEO
hFE(Note)
VCE(sat)
VBE
fT
Cob
VCB=120V, IE=0
VEB=5V, IC=0
IC=1mA, IB=0
VCE=6V, IC=2mA
IC=10mA, IB=1mA
VCE=6V, IC=2mA
VCE=6V, IC=1mA
VCB=10V, IE=0, f=1MHz
Noise Figure
VCE=6V, IC=100 A, f=10Hz, Rg=10k
NF
VCE=6V, IC=100 A, f=1kHz, Rg=10k
VCE=6V, IC=100 A f=1kHz, Rg=100
Note : hFE Classification GR:200 400, BL:350 700
2003. 1. 15
Revision No : 1
MIN.
-
-
120
200
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
0.65
100
3.0
-
-
4.0
MAX.
100
100
-
700
0.3
-
-
-
6.0
2.0
-
UNIT
nA
nA
V
V
V
MHz
pF
dB
1/2
 ▷