KTC3198_15 Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
hExcellent h_FE Linearity
: h_FE(2)=100(Typ.) at V_CE=6V, I_C=150mA
: h_FE(I_C=0.1mA)/h_FE(I_C=2mA)=0.95(Typ.).
hLow Noise : NF=1dB(Typ.). at f=1kHz.
hComplementary to KTA1266.
KTC3198
EPITAXIAL PLANAR NPN TRANSISTOR
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
V_CBO
60
V_CEO
50
V_EBO
5
I_C
150
I_B
50
Collector Power Dissipation
625
*P_C
400
Junction Temperature
T_j
150
Storage Temperature Range
*Cu Lead-Frame : 625mW
Fe Lead-Frame : 400mW
T_stg
-55q150
UNIT
V
V
V
mA
mA
mW


ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
I_CBO
V_CB=60V, I_E=0
Emitter Cut-off Current
I_EBO
V_EB=5V, I_C=0
DC Current Gain
h_FE(1) (Note) V_CE=6V, I_C=2mA
h_FE(2)
V_CE=6V, I_C=150mA
Collector-Emitter Saturation Voltage
V_CE(sat)
I_C=100mA, I_B=10mA
Base-Emitter Saturation Voltage
V_BE(sat)
I_C=100mA, I_B=10mA
Transition Frequency
f_T
V_CE=10V, I_C=1mA
Collector Output Capacitance
C_ob
V_CB=10V, I_E=0, f=1MHz
Base Intrinsic Resistance
rbb’
V_CB=10V, I_E=1mA, f=30MHz
Noise Figure
NF
V_CE=6V, I_C=0.1mA, Rg=10kʃ, f=1kHz
Note : h_FE(1) Classification O:70q140, Y:120q240, GR:200q400, BL:300~700
MIN.
-
-
70
25
-
-
80
-
-
-
TYP.
-
-
-
100
0.1
-
-
2.0
50
1.0
MAX.
0.1
0.1
700
-
0.25
1.0
-
3.5
-
10
UNIT
ǺA
ǺA
V
V
MHz
pF
ʃ
dB
2013. 7. 08
Revision No : 3
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