KTC3198L_15 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
LOW NOISE AMPLIFIER APPLICATION.
FEATURES
hExcellent h_FE Linearity
: h_FE(2)=100(Typ.) at V_CE=6V, I_C=150mA
: h_FE(I_C=0.1mA)/h_FE(I_C=2mA)=0.95(Typ.).
hLow Noise : NF=0.2dB(Typ.). f=(1kHz).
hComplementary to KTA1266L. (O,Y,GR class)
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V_CBO
V_CEO
V_EBO
Collector Current
I_C
Emitter Current
I_E
Collector Power Dissipation
P_C
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
60
50
5
150
-150
625
150
-55q150
UNIT
V
V
V
mA
mA
mW


KTC3198L
EPITAXIAL PLANAR NPN TRANSISTOR
B
C
K
E
G
D
H
F
F
1 23
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
I_CBO
V_CB=60V, I_E=0
Emitter Cut-off Current
I_EBO
V_EB=5V, I_C=0
DC Current Gain
h_FE(1) (Note) V_CE=6V, I_C=2mA
h_FE(2)
V_CE=6V, I_C=150mA
Collector-Emitter Saturation Voltage
V_CE(sat)
I_C=100mA, I_B=10mA
Base-Emitter Saturation Voltage
V_BE(sat)
I_C=100mA, I_B=10mA
Transition Frequency
f_T
V_CE=10V, I_C=1mA
Collector Output Capacitance
C_ob
V_CB=10V, I_E=0, f=1MHz
Base Intrinsic Resistance
rbb’
V_CB=10V, I_E=1mA, f=30MHz
Noise Figure
NF(1)
NF(2)
V_CE=6V, I_C=0.1mA, f=100Hz, Rg=10kʃ
V_CE=6V, I_C=0.1mA, f=1kHz, Rg=10kʃ
Note : h_FE(1) Classification O:70q140, Y:120q240, GR:200q400, BL:300~700
MIN.
-
-
70
25
-
-
80
-
-
-
-
TYP.
-
-
-
100
0.1
-
-
2.0
50
0.5
0.2
MAX.
0.1
0.1
700
-
0.25
1.0
-
3.0
-
6.0
3.0
UNIT
ǺA
ǺA
V
V
MHz
pF
ʃ
dB
1994. 3. 23
Revision No : 0
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