KTC3198A_10 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Excellent h_FE Linearity
: h_FE(2)=100(Typ.) at V_CE=6V, I_C=150mA
: h_FE(I_C=0.1mA)/h_FE(I_C=2mA)=0.95(Typ.).
Low Noise : NF=1dB(Typ.). at f=1kHz.
Complementary to KTA1266A.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
V_CBO
60
V_CEO
50
V_EBO
5
I_C
150
I_B
50
P_C
400
T_j
150
Storage Temperature Range
T_stg
-55 150
UNIT
V
V
V
mA
mA
mW
KTC3198A
EPITAXIAL PLANAR NPN TRANSISTOR
B
C
K
E
G
D
H
F
F
1 23
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. EMITTER
2. COLLECTOR
3. BASE
TO-92 (F)
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
I_CBO
I_EBO
h_FE(1) (Note)
h_FE(2)
V_CE(sat)
V_BE(sat)
f_T
V_CB=60V, I_E=0
V_EB=5V, I_C=0
V_CE=6V, I_C=2mA
V_CE=6V, I_C=150mA
I_C=100mA, I_B=10mA
I_C=100mA, I_B=10mA
V_CE=10V, I_C=1mA
Collector Output Capacitance
C_ob
V_CB=10V, I_E=0, f=1MHz
Base Intrinsic Resistance
rbb'
V_CB=10V, I_E=1mA, f=30MHz
Noise Figure
NF
V_CE=6V, I_C=0.1mA, Rg=10k , f=1kHz
Note : h_FE(1) Classification O:70 140, Y:120 240, GR:200 400, BL:300~700
MIN.
-
-
70
25
-
-
80
-
-
-
TYP.
-
-
-
100
0.1
-
-
2.0
50
1.0
MAX.
0.1
0.1
700
-
0.25
1.0
-
3.5
-
10
UNIT
A
A
V
V
MHz
pF
dB
2010. 1. 28
Revision No : 1
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