KTC3197_15 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic-Encapsulated Transistor

SEMICONDUCTOR
TECHNICAL DATA
HIGH FREQUENCY APPLICATION.
VHF BAND AMPLIFIER APPLICATION.
FEATURES
ᴌHigh Gain : G_pe=33dB(Typ.) (f=45MHz).
ᴌGood Linearity of h_FE.
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_E
P_C
T_j
T_stg
RATING
30
25
4
50
-50
625
150
-55ᴕ150
UNIT
V
V
V
mA
mA
mW
á´±
á´±
KTC3197
EPITAXIAL PLANAR NPN TRANSISTOR
B
C
K
E
G
D
H
F
F
1 23
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Saturation
Voltage
Collector-Emitter
Base-Emitter
Collector Output Capacitance
Collector-Base Time Constant
Transition Frequency
I_CBO
I_EBO
V_(BR)CEO
h_FE
V_CE(sat)
V_BE(sat)
C_ob
C_cᴌrbb^’
f_T
Power Gain (Fig.1)
G_pe
TEST CONDITION
V_CB=30V, I_E=0
V_EB=3V, I_C=0
I_C=10mA, I_B=0
V_CE=12.5V, I_C=12.5mA
I_C=15mA, I_B=1.5mA
V_CB=10V, I_E=0, f=1MHz
V_CB=10V, I_E=-1mA, f=30MHz
V_CE=12.5V, I_C=12.5mA
V_CC=12.5V, I_E=-12.5mA f=45MHz
MIN.
-
-
25
20
-
-
0.8
-
300
28
TYP.
-
-
-
-
-
-
-
-
-
-
MAX.
0.1
0.1
-
200
0.2
1.5
2.0
25
-
36
UNIT
ỌA
V
V
pF
pS
MHz
dB
1994. 6. 24
Revision No : 0
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