KTC3194_15 Datasheet, PDF (1/6 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION.
VHF BAND AMPLIFIER APPLICATION.
FEATURES
hSmall Reverse Transfer Capacitance
: C_re=0.7pF(Typ.).
hLow Noise Figure : NF=2.5dB(Typ.) (f=100MHz).
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
V_CBO
Collector-Emitter Voltage
V_CEO
Emitter-Base Voltage
V_EBO
Collector Current
I_C
Emitter Current
I_E
Collector Power Dissipation
P_C
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
40
30
4
20
-20
625
150
-55q150
UNIT
V
V
V
mA
mA
mW


KTC3194
EPITAXIAL PLANAR NPN TRANSISTOR
B
C
K
E
G
D
H
F
F
1 23
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
I_CBO
V_CB=40V, I_E=0
Emitter Cut-off Current
I_EBO
V_EB=4V, I_C=0
DC Current Gain
h_FE (Note) V_CE=6V, I_C=1mA
Reverse Transfer Capacitance
C_re
V_CB=6V, f=1MHz, I_E=0
Transition Frequency
f_T
V_CE=6V, I_C=1mA
Collector-Base Time Constant
C_chrbb^’ V_CB=6V, I_E=-1mA, f=30MHz
Noise Figure
Power Gain
NF
V_CC=6V, I_E=-1mA
G_pe
f=100MHz (Fig.)
Note : h_FE Classification R:40q80 , O:70q140 , Y:100q200
MIN.
-
-
40
-
300
-
-
15
TYP.
-
-
-
0.7
550
-
2.5
18
MAX.
0.5
0.5
200
-
-
30
5.0
-
UNIT
ǺA
ǺA
pF
MHz
pS
dB
2001. 12. 28
Revision No : 1
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