KTC3192_15 Datasheet, PDF (1/4 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
HIGH FREQUENCY APPLICATION.
HF, VHF BAND AMPLIFIER APPLICATION.
FEATURE
ᴌHigh Power Gain : G_pe=29dB(Typ.) (f=10.7MHz).
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
V_CBO
V_CEO
V_EBO
I_C
I_E
P_C
T_j
Storage Temperature Range
T_stg
RATING
35
30
4
50
-50
625
150
-55ᴕ150
UNIT
V
V
V
mA
mA
mW
á´±
á´±
KTC3192
EPITAXIAL PLANAR NPN TRANSISTOR
B
C
K
E
G
D
H
F
F
1 23
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
I_CBO
V_CB=35V, I_E=0
Emitter Cut-off Current
I_EBO
V_EB=4V, I_C=0
DC Current Gain
h_FE (Note) V_CE=12V, I_C=2mA
Collector-Emitter Saturation Voltage
V_CE(sat)
I_C=10mA, I_B=1mA
Base-Emitter Saturation Voltage
V_BE(sat)
I_C=10mA, I_B=1mA
Transition Frequency
f_T
V_CE=10V, I_C=1mA
Collector Output Capacitance
C_ob
V_CB=10V, I_E=0, f=1MHz
Collector-Base Time Constant
C_cᴌrbb^ᴯ V_CE=10V, I_E=-1mA, f=30MHz
Power Gain
G_pe 0
V_CC=6V, I_E=-1mA, f=10.7MHz (Fig.)
Note : h_FE Classification R:40ᴕ80 , O:70ᴕ140 , Y:120ᴕ240
MIN.
-
-
40
-
-
100
1.4
10
27
TYP.
-
-
-
-
-
-
2.0
-
29
MAX.
0.1
1.0
240
0.4
1.0
400
3.2
50
33
UNIT
ỌA
ỌA
V
V
MHz
pF
pS
dB
1996. 9. 6
Revision No : 1
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