KTC3114 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURE
High DC Current Gain : h_FE=600 3600.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
RATING
50
50
5
150
30
1.5
150
-55 150
UNIT
V
V
V
mA
mA
W
KTC3114
EPITAXIAL PLANAR NPN TRANSISTOR
A
B
C
H
J
K
D
E
F
G
L
M
N
O
P
12 3
1. EMITTER
2. COLLECTOR
3. BASE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
MILLIMETERS
8.3 MAX
5.8
0.7
Φ3.2+_ 0.1
3.5
11.0 +_ 0.3
2.9 MAX
1.0 MAX
1.9 MAX
0.75 +_ 0.15
15.50+_ 0.5
2.3 +_ 0.1
0.65 +_ 0.15
1.6
3.4 MAX
TO-126
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector- Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
I_CBO
I_EBO
h_FE(Note)
V_CE(sat)
f_T
C_ob
Noise Figure
NF(1)
NF(2)
Note: h_FE Classification A:600 1800, B:1200 3600
TEST CONDITION
V_CB=50V, I_E=0
V_EB=5V, I_C=0
V_CE=6V, I_C=2mA
I_C=100mA, I_B=10mA
V_CE=10V, I_C=10mA
V_CB=10V, I_E=0, f=1MHz
V_CE=6V, I_C=0.1mA
f=100Hz, Rg=10k
V_CE=6V, I_C=0.1mA
f=1kHz, Rg=10k
MIN.
-
-
600
-
100
-
-
TYP.
-
-
-
0.1
250
3.5
0.5
MAX.
0.1
0.1
3600
0.25
-
-
-
UNIT
A
A
V
MHz
pF
dB
-
0.3
-
dB
2003. 7. 24
Revision No : 1
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