KTC3072D_15 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION
CAMERA STROBO (For Electronic Flash Unit)
FEATURES
Low Saturation Voltage : V_CE(sat) = 0.4V(Max)(Ic=3A)
High Performance at Low Supply Voltage.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector
Current
DC
Pulse (Note1)
Collector Power Dissipation
Junction Temperature
V_CBO
V_CEO
V_EBO
I_C
I_CP
P_C
T_j
Storage Temperature Range
T_stg
Note 1: Pulse Width 100mS, Duty Cycle 30%
RATING
40
20
7
5
8
1.0
150
-55 150
UNIT
V
V
V
A
W
KTC3072D/L
EPITAXIAL PLANAR NPN TRANSISTOR
A
C
H
F
F
1
2
3
1. BASE
2. COLLECTOR
3. EMITTER
I
J
P
L
DIM
A
B
C
D
E
F
H
I
J
K
L
M
O
P
Q
MILLIMETERS
6.60 +_ 0.2
6.10 +_ 0.2
5.0 +_0.2
1.10+_ 0.2
2.70+_ 0.2
2.30+_ 0.1
1.00 MAX
2.30+_ 0.2
0.5+_ 0.1
2.00 +_0.20
0.50+_ 0.10
0.91+_ 0.10
0.90+_ 0.1
1.00+_ 0.10
0.95 MAX
DPAK
A
I
C
J
H
G
F
F
123
1. BASE
2. COLLECTOR
3. EMITTER
DIM MILLIMETERS
A
6.60+_ 0.2
B
6.10+_ 0.2
C
5.0+_ 0.2
P
D
1.10+_ 0.2
E
9.50+_ 0.6
F
2.30+_ 0.1
G
0.76+_ 0.1
H
1.0 MAX
I
2.30+_ 0.2
J
0.5+_ 0.1
L
K
2.0+_ 0.2
L
0.50+_ 0.1
P
1.0 +_0.1
Q
0.90 MAX
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage (1)
Emitter Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE(1)(Note1)
h_FE(2)
V_CE(sat)
f_T
I_C=100 A, I_E=0
I_C=1mA, I_B=0
I_E=10 A, I_C=0
V_CB=20V, I_E=0
V_EB=7V, I_C=0
V_CE=2V, I_C=0.5A
V_CE=2V, I_C=2A
I_C=3A, I_B=60mA(Pulse)
V_CE=6V, I_C=50mA
Collector Output Capacitance
C_ob
V_CB=20V, f=1MHz, I_E=0
Note 1 : h_FE(1) Classification O:120 240, Y:200 400, GR:350 700
2003. 3. 27
Revision No : 3
IPAK
MIN.
40
20
7
-
-
120
100
-
20
-
TYP.
-
-
-
-
-
-
-
-
100
-
MAX.
-
-
-
100
100
700
-
0.4
-
50
UNIT
V
V
V
nA
nA
V
MHz
pF
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