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KTC3003_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – TRIPLE DIFFUSED NPN TRANSISTOR
SEMICONDUCTOR
TECHNICAL DATA
SWITCHING REGULATOR APPLICATION.
HIGH VOLTAGE AND HIGH SPEED
SWITCHING APPLICATION.
FEATURES
Excellent Switching Times
: ton=1.1 S(Max.), tf=0.7 S(Max.), at IC=1A
High Collector Voltage : VCBO=700V.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Storage Temperature Range
Tstg
RATING
700
400
9
1.5
3
0.75
1.1
150
-55 150
UNIT
V
V
V
A
A
W
KTC3003
TRIPLE DIFFUSED NPN TRANSISTOR
B
C
K
E
G
D
H
F
F
1 23
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Emitter Cut-off Current
DC Current Gain
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Collector Output Capacitance
Transition Frequency
IEBO
hFE(1) (Note)
hFE(2)
VCE(sat)
VBE(sat)
Cob
fT
VEB=9V, IC=0
VCE=2V, IC=0.5A
VCE=2V, IC=1A
IC=0.5A, IB=0.1A
IC=1A, IB=0.25A
IC=1.5A, IB=0.5A
IC=0.5A, IB=0.1A
IC=1A, IB=0.25A
VCB=10V, f=0.1MHz, IE=0
VCE=10V, IC=0.1A
Turn-On Time
Storage Time
ton
300µS
IB1
INPUT
tstg
IB1
IB2
IB2
Fall Time
tf
IB1=IB2 =0.2A
DUTY CYCLE <= 2%
Note : hFE Classification R:9 15, O:13 21, Y: 20~38
OUTPUT
125Ω
VCC =125V
2006. 8. 31
Revision No : 1
MIN.
-
9
5
-
-
-
-
-
-
4
-
TYP.
-
-
-
-
-
-
-
-
21
-
MAX.
10
38
-
0.5
1
3
1
1.2
-
-
UNIT
A
V
V
pF
MHz
-
1.1
S
-
-
4.0
S
-
-
0.7
S
1/2