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| KTC3003HV Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICATION | |||
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SEMICONDUCTOR
TECHNICAL DATA
SWITCHING REGULATOR APPLICATION.
HIGH VOLTAGE AND HIGH SPEED
SWITCHING APPLICATION.
FEATURES
Excellent Switching Times
: ton=1.1 S(Typ.), tf=0.7 S(Typ.), at IC=1A
High Collector Voltage : VCBO=900V.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Storage Temperature Range
Tstg
RATING
900
530
9
1.5
3
0.75
1.1
150
-55 150
UNIT
V
V
V
A
A
W
KTC3003HV
TRIPLE DIFFUSED NPN TRANSISTOR
B
C
K
E
G
D
H
F
F
1 23
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Emitter Cut-off Current
DC Current Gain
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Collector Output Capacitance
IEBO
hFE(1)
*hFE(2)
hFE(3)
VCE(sat)
VBE(sat)
Cob
VEB=9V, IC=0
VCE=10V, IC=10mA
VCE=10V, IC=0.4A
VCE=10V, IC=1A
IC=0.5A, IB=0.1A
IC=1.5A, IB=0.5A
IC=0.5A, IB=0.1A
IC=1A, IB=0.25A
VCB=10V, f=0.1MHz, IE=0
Transition Frequency
fT
VCE=10V, IC=0.1A
Turn-On Time
Storage Time
ton
300µS
IB1
INPUT
tstg
IB1
IB2
IB2
Fall Time
tf
IB1=IB2 =0.2A
DUTY CYCLE <= 2%
*Note : hFE Classification R:20 30, O:13 21, Y: 35~40
OUTPUT
125â¦
VCC =125V
MIN.
-
15
20
6
-
-
-
-
-
4
TYP.
-
-
-
-
-
-
-
-
21
-
MAX.
10
50
50
-
0.8
2.5
1
1.2
-
-
UNIT
A
V
V
pF
MHz
-
1.1
-
S
-
3.0
-
S
-
0.7
-
S
2007. 9. 10
Revision No : 1
1/2
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