KTC2875_15 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
FOR MUTING AND SWITCHING APPLICATION.
FEATURES
hHigh Emitter-Base Voltage : V_EBO=25V(Min.)
hHigh Reverse h_FE
: Reverse h_FE=150(Typ.) (V_CE=-2V, I_C=-2mA)
hLow on Resistance : R_ON=1ʃ(Typ.), (I_B=5mA)
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
RATING
50
20
25
300
60
150
150
-55q150
UNIT
V
V
V
mA
mA
mW


KTC2875
EPITAXIAL PLANAR NPN TRANSISTOR
E
L BL
DIM MILLIMETERS
A
2.93+_ 0.20
B 1.30+0.20/-0.15
2
3
C
1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1
G
1.90
H
0.95
J 0.13+0.10/-0.05
K
0.00 ~ 0.10
Q
P
P
L
0.55
M
0.20 MIN
N 1.00+0.20/-0.10
P
7
Q
0.1 MAX
M
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain (Note)
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE
f_T
C_ob
V_CB=50V, I_E=0
V_EB=25V, I_C=0
V_CE=2V, I_C=4mA
I_C=30mA, I_B=3mA
V_CE=2V, I_C=4mA
V_CE=6V, I_C=4mA
V_CB=10V, I_E=0, f=1MHz
Turn-on Time
t_on
Switching
Time
Storage Time
t_stg
Fall Time
t_f
Note : h_FE Classification A: 200~700, B: 350q1200
2009. 3. 12
Revision No : 3
MIN.
-
-
200
-
-
-
-
TYP.
-
-
-
0.042
0.61
30
4.8
MAX.
0.1
0.1
1200
0.3
-
-
7
UNIT
ǺA
ǺA
V
V
MHz
pF
-
160
-
-
500
-
nS
-
130
-
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