KTC2875_09 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
FOR MUTING AND SWITCHING APPLICATION.
FEATURES
High Emitter-Base Voltage : V_EBO=25V(Min.)
High Reverse h_FE
: Reverse h_FE=150(Typ.) (V_CE=-2V, I_C=-2mA)
Low on Resistance : R_ON=1 (Typ.), (I_B=5mA)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
RATING
50
20
25
300
60
150
150
-55 150
UNIT
V
V
V
mA
mA
mW
KTC2875
EPITAXIAL PLANAR NPN TRANSISTOR
E
L
B
L
2
3
1
P
P
M
1. EMITTER
2. BASE
3. COLLECTOR
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
SOT-23
Marking
h_FE Rank
Type Name
M
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
Collector Cut-off Current
I_CBO
V_CB=50V, I_E=0
-
Emitter Cut-off Current
I_EBO
V_EB=25V, I_C=0
-
DC Current Gain (Note)
h_FE
V_CE=2V, I_C=4mA
200
Collector-Emitter Saturation Voltage V_CE(sat) I_C=30mA, I_B=3mA
-
Base-Emitter Voltage
V_BE
V_CE=2V, I_C=4mA
-
Transition Frequency
f_T
V_CE=6V, I_C=4mA
-
Collector Output Capacitance
C_ob
V_CB=10V, I_E=0, f=1MHz
-
Switching
Time
Turn-on Time
Storage Time
Fall Time
t_on
t_stg
10V
INPUT
4kΩ
OUTPUT
-
-
1µs
t_f
DUTY CYCLE ^<= 2%
V_CC =12V
-
V_BB =-3V
Note : h_FE Classification A: 200~700, B: 350 1200
TYP.
-
-
-
0.042
0.61
30
4.8
MAX.
0.1
0.1
1200
0.3
-
-
7
UNIT
A
A
V
V
MHz
pF
160
-
500
-
nS
130
-
2009. 3. 12
Revision No : 3
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