KTC2874_03 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE

SEMICONDUCTOR
TECHNICAL DATA
FOR MUTING AND SWITCHING APPLICATION.
FEATURES
High Emitter-Base Voltage : V_EBO=25V(Min.)
High Reverse h_FE
: Reverse h_FE=150(Typ.) (V_CE=-2V, I_C=-4mA)
Low on Resistance : R_ON=1 (Typ.), (I_B=5mA)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
RATING
50
20
25
300
60
625
150
-55 150
UNIT
V
V
V
mA
mA
mW
KTC2874
SILICON NPN TRANSISTOR
EPITAXIAL PLANAR TYPE
B
C
D
d
P
P
DIM
A
B
C
d
D
E
G
L
P
T
MILLIMETERS
4.7 MAX
5.1 MAX
4.1 MAX
0.45
0.55 MAX
0.8
1.8
12.7 MIN
1.27
0.45
1 23
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain (Note)
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
I_CBO
I_EBO
h_FE *
V_CE(sat)
V_BE
f_T
C_ob
V_CB=50V, I_E=0
V_EB=25V, I_C=0
V_CE=2V, I_C=4mA
I_C=30mA, I_B=3mA
V_CE=2V, I_C=4mA
V_CE=6V, I_C=4mA
V_CB=10V, I_E=0, f=1MHz
MIN.
-
-
200
-
-
-
-
Turn-on Time
t_ON
OUTPUT
-
Switching
Time
Storage Time
Fall Time
INPUT
4kΩ
t_stg
10V
-
1µs
t_f
DUTY CYCLE ^<= 2%
V_CC =12V
-
V_BB =-3V
*Note) : h_FE Classification A:200~700, B: 350 1200
TYP.
-
-
-
0.042
0.61
30
4.8
MAX.
0.1
0.1
1200
0.1
-
-
7
UNIT
A
A
V
V
MHz
pF
160
-
500
-
nS
130
-
2003. 6. 30
Revision No : 4
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