KTC2825D Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
KTC2825D
EPITAXIAL PLANAR NPN TRANSISTOR
LED DRIVE APPLICATION
FEATURES
hAdoption of MBIT processes.
hLow collector-to-emitter saturation voltage.
hFast switching speed.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
Collector-Base Voltage
Vollector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current(Pulse)
Base Current
Collector Power Dissipation
Junction Temperature
T_a=25
T_C=25
Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
P_C
P_C
T_j
T_stg
RATING
60
60
6
3
6
600
1
15
150
-55q150
UNIT
V
V
V
A
A
mA
W
W


A
C
M
G
FF
123
H
K
J
DIM MILLIMETERS
A
6.6 +_0.2
B
6.1+_ 0.2
C
5.0 +_ 0.2
D
1.1+_ 0.2
E
2.7 +_ 0.2
F
2.3+_ 0.1
G
NH
J
1.0 MAX
2.3+_ 0.2
0.5+_ 0.1
K
1.0+_ 0.1
L
L
M
0.5+_ 0.1
0.95 MAX
N
0.9+_ 0.1
1. BASE
2. COLLECTOR
3. EMITTER
DPAK
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Output Capacitance
I_CBO
I_EBO
h_FE(1)
h_FE (2)
V_{CE(sat) (1)}
V_{CE(sat) (2)}
V_BE(sat)
C_ob
Turn-on Time
t_on
Switching
Storage Time
t_stg
Time
Fall Time
t_f
TEST CONDITION
V_CB=40V, I_E=0
V_EB=4V, I_C=0
V_CE=2V, I_C=100ɶ
V_CE=2V, I_C=3A
I_C=2A, I_B=100ɶ
I_C=360ɶ, I_B=2ɶ
I_C=2A, I_B=100ɶ
V_CB=10V, f=1ʀ, I_E=0
PW=20µs
DC ^<=1%
I _B1
R8
INPUT
I _B2
VR
50
100µ
25
470µ
-5V
25V
10I_B1=-10I_B2 =I _C=1A
MIN.
-
-
200
35
-
-
-
-
TYP.
-
-
-
-
0.19
-
0.94
25
MAX. UNIT.
1
ɵ
1
ɵ
400
-
0.5
V
0.3
1.2
V
-
ʆ
-
35
-
-
470
-
nS
-
90
-
2010. 11. 11
Revision No : 1
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