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KTC2815D_15 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR
SEMICONDUCTOR
TECHNICAL DATA
KTC2815D/L
EPITAXIAL PLANAR NPN TRANSISTOR
POWER AMPLIFIER APPLICATION.
POWER SWITCHING APPLICATION.
FEATURES
Low Collector Saturation Voltage
: VCE(sat)=0.5V(Max.) (IC=1A)
High Speed Switching Time : tstg=1 S(Typ.)
Complementary to KTA1718D/L.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
VCBO
VCEO
VEBO
IC
IE
Collector Power
Dissipation
Ta=25
Tc=25
PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING
50
50
5
2
-2
1.0
10
150
-55 150
UNIT
V
V
V
A
A
W
A
C
H
F
F
1
2
3
1. BASE
2. COLLECTOR
3. EMITTER
I
J
P
L
DIM
A
B
C
D
E
F
H
I
J
K
L
M
O
P
Q
MILLIMETERS
6.60 +_ 0.2
6.10 +_ 0.2
5.0 +_ 0.2
1.10+_ 0.2
2.70+_ 0.2
2.30+_ 0.1
1.00 MAX
2.30+_ 0.2
0.5+_ 0.1
2.00 +_ 0.20
0.50 +_ 0.10
0.91+_ 0.10
0.90+_ 0.1
1.00 +_ 0.10
0.95 MAX
DPAK
A
I
C
J
H
G
F
F
123
1. BASE
2. COLLECTOR
3. EMITTER
DIM MILLIMETERS
A
6.60+_ 0.2
B
6.10+_ 0.2
C
5.0+_ 0.2
P
D
1.10+_ 0.2
E
9.50+_ 0.6
F
2.30+_ 0.1
G
0.76+_ 0.1
H
1.0 MAX
I
2.30+_ 0.2
J
0.5 +_ 0.1
L
K
2.0 +_ 0.2
L
0.50+_ 0.1
P
1.0 +_0.1
Q
0.90 MAX
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
SYMBOL
ICBO
IEBO
V(BR)CEO
hFE(1) (Note)
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Turn On Time
ton
Switching
Time
Storage Time
tstg
Fall Time
tf
Note : hFE(1) Classification O:70~140, Y:120~240.
TEST CONDITION
VCB=50V, IE=0
VEB=5V, IC=0
IC=10mA, IB=0
VCE=2V, IC=0.5A
VCE=2V, IC=1.5A
IC=1A, IB=0.05A
IC=1A, IB=0.05A
VCE=2V, IC=0.5A
VCB=10V, IE=0, f=1MHz
20µsec
INPUT IB1
IB1
IB2
IB2
OUTPUT
IB1=-I B2 =-0.05A
DUTY CYCLE <= 1%
VCC =30V
IPAK
MIN.
-
-
50
70
40
-
-
-
-
TYP.
-
-
-
-
-
-
-
100
30
MAX. UNIT
0.1
A
0.1
A
-
V
240
-
0.5 V
1.2 V
- MHz
-
pF
- 0.1 -
- 1.0 -
S
- 0.1 -
2003. 3. 27
Revision No : 3
1/3
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