KTC2814_03 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
POWER AMPLIFIER APPLICATION.
POWER SWITCHING APPLICATION.
FEATURES
Low Collector Saturation Voltage
: V_CE(sat)=0.5V(Max.) (I_C=1A)
High Speed Switching Time : t_stg=1.0 S(Typ.)
Complementary to KTA1715.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
V_CBO
V_CEO
V_EBO
I_C
I_E
Collector Power
Dissipation
Ta=25
Tc=25
P_C
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
50
50
5
2
-2
1.5
10
150
-55 150
UNIT
V
V
V
A
A
W
KTC2814
EPITAXIAL PLANAR NPN TRANSISTOR
A
B
C
H
J
K
D
E
F
G
L
M
N
O
P
12 3
1. EMITTER
2. COLLECTOR
3. BASE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
MILLIMETERS
8.3 MAX
5.8
0.7
Φ3.2+_ 0.1
3.5
11.0 +_ 0.3
2.9 MAX
1.0 MAX
1.9 MAX
0.75 +_ 0.15
15.50+_ 0.5
2.3 +_ 0.1
0.65 +_ 0.15
1.6
3.4 MAX
TO-126
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
I_CBO
I_EBO
V_(BR)CEO
h_FE (1) (Note)
h_FE 2
V_CE(sat)
V_BE(sat)
f_T
C_ob
TEST CONDITION
V_CB=50V, I_E=0
V_EB=5V, I_C=0
I_C=10mA, I_B=0
V_CE=2V, I_C=0.5A
V_CE=2V, I_C=1.5A
I_C=1A, I_B=0.05A
I_C=1A, I_B=0.05A
V_CE=2V, I_C=0.5A
V_CB=10V, I_E=0, f=1MHz
Turn On Time
t_on
Switching
Time
Storage Time
t_stg
Fall Time
t_f
Note : h_FE Classification O:70 140, Y:120 240
20µsec
INPUT ^IB1
I_B1
I_B2
I_B2
I_B1=-I _B2 =-0.05A
DUTY CYCLE ^<= 1%
OUTPUT
V_CC =30V
MIN.
-
-
50
70
40
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
100
30
MAX.
0.1
0.1
-
240
-
0.5
1.2
-
-
UNIT
A
A
V
V
V
MHz
pF
0.1
-
-
1.0
-
S
-
0.1
-
2003. 7. 24
Revision No : 3
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