KTC2803_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
AUDIO FREQUENCY, HIGH FREQUENCY
POWER AMPLIFIER
FEATURES
Complementary to KTA1704.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
V_CBO
120
Collector-Emitter Voltage
V_CEO
120
Emitter-Base Voltage
V_EBO
5
Collector
DC
I_C
1.2
Current
Pulse (Note1)
I_CP
2.5
Base Current
I_B
0.3
Collector Power ^Ta=25
Dissipation
Tc=25
1.5
P_C
20
Junction Temperature
Storage Temperature Range
T_j
150
T_stg
-55 150
Note 1 : Pulse Width 10mS, Duty Cycle 50%
UNIT
V
V
V
A
A
W
KTC2803
EPITAXIAL PLANAR NPN TRANSISTOR
A
B
C
H
J
K
D
E
F
G
L
M
N
O
P
12 3
1. EMITTER
2. COLLECTOR
3. BASE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
MILLIMETERS
8.3 MAX
5.8
0.7
Φ3.2+_ 0.1
3.5
11.0 +_ 0.3
2.9 MAX
1.0 MAX
1.9 MAX
0.75 +_ 0.15
15.50+_ 0.5
2.3 +_ 0.1
0.65 +_ 0.15
1.6
3.4 MAX
TO-126
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut of Current
Emitter Cut of Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Gain Bandwidth Product
Output Capacitance
Collector-Emitter Saturation Voltage
I_CBO
I_EBO
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
h_FE(1) Note
h_FE(2)
f_T
C_ob
V_CE(sat)
V_CB=50V, I_E=0
V_EB=4V, I_C=0
I_C=10 A, I_E=0
I_C=1mA, I_B=0
I_E=10 A, I_C=0
V_CE=5V, I_C=50mA
V_CE=5V, I_C=500mA
V_CE=10V, I_C=50mA
V_CB=10V, I_E=0, f=1MHz
I_C=500mA, I_B=50mA
Base-Emitter Saturation Voltage
V_BE(sat)
I_C=500mA, I_B=50mA
(Note) : h_FE(1) Classification Y:100 200, GR:160 320
MIN.
-
-
120
120
5
100
20
-
-
-
-
TYP.
-
-
-
-
-
-
-
110
30
0.15
0.85
MAX.
1
1
-
-
-
320
-
-
-
0.4
1.2
UNIT
A
A
V
V
V
MHz
pF
V
V
2003. 7. 24
Revision No : 4
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