KTC2800_15 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE APPLICATION.
FEATURES
High Transition Frequency : f_T=100MHz(Typ.).
Complementary to KTA1700.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
V_CBO
V_CEO
V_EBO
I_C
I_B
Collector Power
Dissipation
Ta=25
Tc=25
P_C
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
160
160
5
1.5
1.0
1.5
10
150
-55 150
UNIT
V
V
V
A
A
W
KTC2800
EPITAXIAL PLANAR NPN TRANSISTOR
A
B
C
H
J
K
D
E
F
G
L
M
N
O
P
12 3
1. EMITTER
2. COLLECTOR
3. BASE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
MILLIMETERS
8.3 MAX
5.8
0.7
Φ3.2+_ 0.1
3.5
11.0 +_ 0.3
2.9 MAX
1.0 MAX
1.9 MAX
0.75 +_ 0.15
15.50+_ 0.5
2.3 +_ 0.1
0.65 +_ 0.15
1.6
3.4 MAX
TO-126
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
I_CBO
I_EBO
V_(BR)CEO
V_(BR)EBO
h_FE(Note)
V_CE(sat)
V_BE
f_T
Collector Output Capacitance
C_ob
Note: h_FE Classification O:70 140 , Y:120 240
TEST CONDITION
V_CB=160V, I_E=0
V_EB=5V, I_C=0
I_C=10mA, I_B=0
I_E=1mA, I_C=0
V_CE=5V, I_C=100mA
I_C=500mA, I_B=50mA
V_CE=5V, I_C=500mA
V_CE=10V, I_C=100mA
V_CB=10V, I_E=0, f=1MHz
MIN.
-
-
160
5.0
70
-
-
-
-
TYP.
-
-
-
-
-
-
-
100
25
MAX.
1.0
1.0
-
-
240
1.5
1.0
-
-
UNIT
A
A
V
V
V
V
MHz
pF
2003. 7. 24
Revision No : 2
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