KTC2036 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
KTC2036
EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
FEATURES
hLow Collector Saturation Voltage
: V_CE(sat)=1.0V(Max) at I_C=2A, I_B=0.2A
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power
Dissipation
Ta=25
Tc=25
Junction Temperature
Storage Temperature Range
V_CBO
V_CEO
V_CER
V_EBO
I_C
I_B
P_C
T_j
T_stg
RATING
80
60
100
10
3
0.5
2
20
150
-55q150
UNIT
V
V
V
A
A
W


A
S
E
L
L
M
D
D
NN
C
DIM MILLIMETERS
A
10.0+_ 0.3
B
15.0+_ 0.3
C
2.70 +_ 0.3
D 0.76+0.09/-0.05
E
Φ3.2 +_ 0.2
F
3.0+_ 0.3
G
12.0+_ 0.3
H
0.5+0.1/-0.05
J
13.6 +_ 0.5
R
K
3.7+_ 0.2
L
1.2+0.25/-0.1
M
1.5+0.25/-0.1
N
2.54 +_ 0.1
P
6.8+_ 0.1
Q
4.5 +_ 0.2
R
2.6 +_0.2
H
S
0.5 Typ
123
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
ELECTRICAL CHARA CTERISTICS (Ta=25)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
SYMBOL
TEST CONDITION
I_CBO
I_CER
V_CB=80V, I_E=0
V_CE=100V, R_BE=10ʄ
I_EBO
V_EB=10V, I_C=0
V_(BR)CEO I_C=50mA, I_B=0
h_{FE (1)} (Note) V_CE=5V, I_C=1mA
h_{FE (2)}
V_CE=5V, I_C=0.5A
V_CE(sat)
I_C=2A, I_B=0.2A
V_BE
V_CE=5V, I_C=0.5A
f_T
V_CE=5V, I_C=0.5A
C_ob
V_CB=10V, I_E=0, f=1MHz
Turn-on Time
t_on
Switching Time
Storage Time
t_stg
Fall Time
t_f
* Note) : hFE Classification A : 80 ~ , m : 100 ~
20µsec
I_B1
INPUT
I_B1
I_B2
I_B2
I_B1=-I _B2 =0.2A
DUTY CYCLE ^<= 1%
OUTPUT
15Ω
V_CC =30V
MIN.
-
-
-
60
80
150
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
0.25
0.7
30
35
MAX.
1
1
1
-
-
250
1.0
1.0
-
-
UNIT
ǺA
ǺA
ǺA
V
V
V
MHz
pF
0.085
-
1.02
-
ǺS
0.041
-
2013. 4. 16
Revision No : 3
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