KTC2030D Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
KTC2030D
EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
FEATURES
hLow Collector Saturation Voltage
: V_CE(sat)=1.0V(Max) at I_C=2A, I_B=0.2A
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power
Dissipation
Ta=25
Tc=25
Junction Temperature
Storage Temperature Range
V_CBO
V_CEO
V_CER
V_EBO
I_C
I_B
P_C
T_j
T_stg
RATING
80
60
100
10
3
0.5
1
20
150
-55q150
UNIT
V
V
V
A
A
W


A
C
M
G
FF
123
H
K
J
DIM MILLIMETERS
A
6.6 +_0.2
B
6.1+_ 0.2
C
5.0 +_ 0.2
D
1.1+_ 0.2
E
2.7 +_ 0.2
F
2.3+_ 0.1
G
NH
J
1.0 MAX
2.3+_ 0.2
0.5+_ 0.1
K
1.0+_ 0.1
L
L
M
0.5+_ 0.1
0.95 MAX
N
0.9+_ 0.1
1. BASE
2. COLLECTOR
3. EMITTER
DPAK
ELECTRICAL CHARA CTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
I_CBO
I_CER
I_EBO
V_(BR)CEO
h_{FE (1)}
h_{FE (2)}
V_CE(sat)
V_BE
f_T
C_ob
Turn-on Time
t_on
Switching Time
Storage Time
t_stg
Fall Time
t_f
TEST CONDITION
V_CB=80V, I_E=0
V_CE=100V, R_BE=10ʄ
V_EB=10V, I_C=0
I_C=50mA, I_B=0
V_CE=5V, I_C=1mA
V_CE=5V, I_C=0.5A
I_C=2A, I_B=0.2A
V_CE=5V, I_C=0.5A
V_CE=5V, I_C=0.5A
V_CB=10V, I_E=0, f=1MHz
20µsec
INPUT ^IB1
I_B1
I_B2
I_B2
I_B1=-I _B2 =0.2A
DUTY CYCLE ^<= 1%
OUTPUT
15Ω
V_CC =30V
MIN.
-
-
-
60
100
150
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
0.25
0.7
30
35
MAX.
1
1
1
-
-
250
1.0
1.0
-
-
UNIT
ǺA
ǺA
ǺA
V
V
V
MHz
pF
0.085
-
1.02
-
ǺS
0.041
-
2012. 4. 2
Revision No : 0
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