KTC2022D_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
KTC2022D/L
EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
FEATURES
Low Collector-Emitter Saturation Voltage
: V_CE(sat)=-2.0V(Max.).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation (Tc=25 )
Junction Temperature
Storage Temperature Range
V_CBO
V_CEO
V_CES
V_EBO
I_C
I_CP
I_B
P_C
T_j
T_stg
130
100
130
8
5
10
0.5
20
150
-55 150
UNIT
V
V
V
V
A
A
A
W
A
C
H
F
F
1
2
3
1. BASE
2. COLLECTOR
3. EMITTER
I
J
P
L
DIM
A
B
C
D
E
F
H
I
J
K
L
M
O
P
Q
MILLIMETERS
6.60 +_ 0.2
6.10 +_ 0.2
5.0 +_0.2
1.10+_ 0.2
2.70+_ 0.2
2.30+_ 0.1
1.00 MAX
2.30+_ 0.2
0.5+_ 0.1
2.00 +_0.20
0.50+_ 0.10
0.91+_ 0.10
0.90+_ 0.1
1.00+_ 0.10
0.95 MAX
DPAK
A
I
C
J
H
G
F
F
123
1. BASE
2. COLLECTOR
3. EMITTER
DIM MILLIMETERS
A
6.60+_ 0.2
B
6.10+_ 0.2
C
5.0+_ 0.2
P
D
1.10+_ 0.2
E
9.50+_ 0.6
F
2.30+_ 0.1
G
0.76+_ 0.1
H
1.0 MAX
I
2.30+_ 0.2
J
0.5+_ 0.1
L
K
2.0+_ 0.2
L
0.50+_ 0.1
P
1.0 +_0.1
Q
0.90 MAX
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
SYMBOL
I_CBO
I_CEO
I_EBO
V_(BR)CEO
h_FE(1)
h_FE(2)(Note)
h_FE(3)
V_CE(sat)
V_BE
f_T
C_ob
TEST CONDITION
V_CB=130V, I_E=0
V_CE=60V, I_B=0
V_EB=8V, I_C=0
I_C=50mA, I_B=0
V_CE=5V, I_C=1mA
V_CE=5V, I_C=1A
V_CE=5V, I_C=4A
I_C=4A, I_B=0.4A
V_CE=5V, I_C=1A
V_CE=5V, I_C=1A
V_CB=10V, I_E=0, f=1MHz
Note : h_FE(1) Classification 0:70~140, Y:120~240.
IPAK
MIN.
-
-
-
100
35
70
20
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
30
40
MAX.
10
1.5
1.0
-
-
240
-
2.0
1.5
-
-
UNIT
A
mA
V
V
V
MHz
pF
2009. 12. 22
Revision No : 6
1/2