KTC2020D_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
DPAK FOR SURFACE MOUNT APPLICATIONS.
FEATURES
hLow Collector Saturation Voltage
: V_CE(sat)=1.0V(Max.) at I_C=2A, I_B=0.2A.
hStraight Lead (IPAK, "L" Suffix)
hComplementary to KTA1040D/L.
KTC2020D
EPITAXIAL PLANAR NPN TRANSISTOR
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
V_CBO
Collector-Emitter Voltage
V_CEO
Emitter-Base Voltage
V_EBO
Collector Current
I_C
Base Current
I_B
Collector Power
Ta=25
P_C
Dissipation
Tc=25
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
60
60
7
3
0.5
1.0
20
150
-55q150
UNIT
V
V
V
A
A
W


ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
I_CBO
I_EBO
V_(BR)CEO
h_FE (Note)
V_CE(sat)
V_BE
f_T
C_ob
Turn-on Time
t_on
TEST CONDITION
V_CB=60V, I_E=0
V_EB=7V, I_C=0
I_C=50mA, I_B=0
V_CE=5V, I_C=0.5A
I_C=2A, I_B=0.2A
V_CE=5V, I_C=0.5A
V_CE=5V, I_C=0.5A
V_CB=10V, I_E=0, f=1MHz
Switching Time Storage Time
t_stg
Fall Time
t_f
Note : h_FE Classification Y:100~200, GR:150~300.
2003. 3. 27
Revision No : 5
MIN.
-
-
60
100
-
-
-
-
-
TYP.
-
-
-
-
0.5
0.7
30
35
MAX.
100
100
-
300
1.0
1.0
-
-
UNIT
ǺA
ǺA
V
-
V
V
MHz
pF
0.65
-
-
1.3
-
ǺS
-
0.65
-
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