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KTC2020D Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE DPAK FOR SVRFACE MOUNT)
SEMICONDUCTOR
TECHNICAL DATA
KTC2020D/L
EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
DPAK FOR SVRFACE MOUNT APPLICATIONS.
FEATURES
Low Collector Saturation Voltage
: VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A.
Straight Lead (IPAK, "L" Suffix)
Complementary to KTA1040D/L.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
VCBO
VCEO
VEBO
IC
IB
Collector Power
Dissipation
Ta=25
Tc=25
PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
RATING
60
60
7
3
0.5
1.0
20
150
-55 150
UNIT
V
V
V
A
A
W
A
C
H
F
F
1
2
3
1. BASE
2. COLLECTOR
3. EMITTER
I
J
P
L
DIM
A
B
C
D
E
F
H
I
J
K
L
M
O
P
Q
MILLIMETERS
6.60 +_ 0.2
6.10 +_ 0.2
5.0 +_ 0.2
1.10+_ 0.2
2.70+_ 0.2
2.30+_ 0.1
1.00 MAX
2.30+_ 0.2
0.5+_ 0.1
2.00 +_ 0.20
0.50 +_ 0.10
0.91+_ 0.10
0.90+_ 0.1
1.00 +_ 0.10
0.95 MAX
DPAK
A
I
C
J
H
G
F
F
123
1. BASE
2. COLLECTOR
3. EMITTER
DIM MILLIMETERS
A
6.60+_ 0.2
B
6.10+_ 0.2
C
5.0+_ 0.2
P
D
1.10+_ 0.2
E
9.50+_ 0.6
F
2.30+_ 0.1
G
0.76+_ 0.1
H
1.0 MAX
I
2.30+_ 0.2
J
0.5 +_ 0.1
L
K
2.0 +_ 0.2
L
0.50+_ 0.1
P
1.0 +_0.1
Q
0.90 MAX
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
ICBO
IEBO
V(BR)CEO
hFE (Note)
VCE(sat)
VBE
fT
Cob
Turn-on Time
ton
Switching Time Storage Time
tstg
Fall Time
tf
Note : hFE Classification Y:100~200, GR:150~300.
TEST CONDITION
VCB=60V, IE=0
VEB=7V, IC=0
IC=50mA, IB=0
VCE=5V, IC=0.5A
IC=2A, IB=0.2A
VCE=5V, IC=0.5A
VCE=5V, IC=0.5A
VCB=10V, IE=0, f=1MHz
20µsec
INPUT IB1
IB1
IB2
IB2
OUTPUT
15Ω
IB1=-I B2 =0.2A
DUTY CYCLE <= 1%
VCC =30V
IPAK
MIN.
-
-
60
100
-
-
-
-
-
TYP.
-
-
-
-
0.5
0.7
30
35
0.65
-
1.3
-
0.65
MAX.
100
100
-
300
1.0
1.0
-
-
-
UNIT
A
A
V
-
V
V
MHz
pF
-
S
-
2003. 3. 27
Revision No : 5
1/2
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