KTC200_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
ᴌExcellent h_FE Linearity
: h_FE(2)=25(Min.), (V_CE=2V, I_C=200mA).
ᴌComplementary to KTA200.
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
V_CBO
V_CEO
V_EBO
I_C
I_E
P_C
T_j
T_stg
RATING
60
45
5
500
-500
625
150
-55ᴕ150
UNIT
V
V
V
mA
mA
mW
á´±
á´±
KTC200
EPITAXIAL PLANAR NPN TRANSISTOR
B
C
K
E
G
D
H
F
F
1 23
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emittter Voltage
Transition Frequency
I_CBO
I_EBO
h_FE(1) (Note)
h_FE(2)
V_CE(sat)
V_BE
f_T
Collector Output Capacitance
C_ob
Note : h_FE Classification O:70ᴕ140, Y:120ᴕ240
TEST CONDITION
V_CB=50V, I_E=0
V_EB=5V, I_C=0
V_CE=2V, I_C=50mA
V_CE=2V, I_C=200mA
I_C=100mA, I_B=10mA
V_CE=2V, I_C=200mA
V_CE=6V, I_C=20mA
V_CB=6V, I_E=0, f=1MHz
MIN.
-
-
70
25
-
-
-
-
TYP.
-
-
-
-
-
-
300
7.0
MAX.
0.1
0.1
240
-
0.25
1.0
-
-
UNIT
ỌA
ỌA
V
V
MHz
pF
1995. 1. 23
Revision No : 0
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