KTC1006_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
CB TRANSCEIVER TX DRIVER APPLICATION.
FEATURES
ᴌRecommended for Driver Stage Application of
AM 4W Transmitter.
ᴌHigh Power Gain.
ᴌWide Area of Safe Operation.
MAXIMUM RATINGS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Colletor Power Dissipation
Junction Temperature
V_CBO
V_CER
V_EBO
I_C
I_E
P_C
T_j
Storage Temperature Range
T_stg
RATING
80
80
5
800
-800
1
150
-55ᴕ150
UNIT
V
V
V
mA
mA
W
á´±
á´±
KTC1006
EPITAXIAL PLANAR NPN TRANSISTOR
B
D
P
DEPTH:0.2
C
Q
K
F
F
H
H
M
E
123
HL
N
N
1. EMITTER
2. COLLECTOR
3. BASE
DIM MILLIMETERS
A
7.20 MAX
B
5.20 MAX
S
C
0.60 MAX
D
2.50 MAX
E
1.15 MAX
F
1.27
G
1.70 MAX
H
0.55 MAX
J
14.00+_ 0.50
H
K
L
0.35 MIN
0.75+_ 0.10
M
4
N
25
O
1.25
P
Φ1.50
Q
0.10 MAX
R
12.50 +_ 0.50
S
1.00
TO-92L
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
I_CBO
I_CER
I_EBO
h_FE
V_CE(sat)
V_BE
f_T
Collector Output Capacitance
C_ob
TEST CONDITION
V_CB=60V, I_E=0
V_CE=80V, R_BE=220á½µ
V_EB=5V, I_C=0
V_CE=2V, I_C=150mA
I_C=500mA, I_B=20mA
V_CE=2V, I_C=500mA
V_CE=10V, I_C=100mA
V_CB=10V, I_E=0, f=1MHz
MIN.
-
-
-
100
-
-
-
-
TYP.
-
-
-
-
-
0.9
150
12
MAX.
0.1
0.1
0.1
-
0.7
-
-
-
UNIT
ỌA
ỌA
ỌA
V
V
MHz
pF
1994. 5. 20
Revision No : 0
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