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KTC1003_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR
SEMICONDUCTOR
TECHNICAL DATA
KTC1003
EPITAXIAL PLANAR NPN TRANSISTOR
B/W TV HORIZONTAL DEFLECTION
OUTPUT APPLICATION.
FEATURES
Large Collector Current Capability.
Large Collector Power Dissipation Capability.
MAXIMUM RATINGS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
(Tc=25 )
Junction Temperature
Storage Temperature Range
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
RATING
200
60
5
4
10
1
30
150
-55 150
UNIT
V
V
V
A
A
W
A
S
E
L
L
M
D
D
NN
C
DIM MILLIMETERS
A
10.0+_ 0.3
B
15.0+_ 0.3
C
2.70 +_ 0.3
D 0.76+0.09/-0.05
E
Φ3.2 +_ 0.2
F
3.0+_ 0.3
G
12.0+_ 0.3
H
0.5+0.1/-0.05
J
13.6 +_ 0.5
R
K
3.7+_ 0.2
L
1.2+0.25/-0.1
M
1.5+0.25/-0.1
N
2.54 +_ 0.1
P
6.8+_ 0.1
Q
4.5 +_ 0.2
R
2.6 +_0.2
H
S
0.5 Typ
123
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
ICBO
IEBO
hFE (1)
hFE (2)
VCE(sat)
VBE(sat)
Transition Frequency
fT
TEST CONDITION
VCB=170V, IE=0
VEB=5V, IC=0
VCE=5V, IC=1A
VCE=5V, IC=4A
IC=4A, IB=0.4A
IC=4A, IB=0.4A
VCE=5V, IC=0.5A
MIN.
-
-
30
20
-
-
-
TYP.
-
-
-
40
-
-
8.0
MAX.
10
10
150
-
1.0
1.5
-
UNIT
A
A
V
V
MHz
2007. 5. 21
Revision No : 1
1/2
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