KTB985_15 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
VOLTAGE REGULATORS, RELAY DRIVERS
LAMP DRIVERS, ELECTRICAL EQUIPMENT
FEATURES
hAdoption of MBIT processes.
hLow collector-to-emitter saturation voltage.
hFast switching speed.
hLarge current capacity and wide ASO.
hComplementary to KTD1347.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Vollector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Power Dissipation
Junction Temperature
V_CBO
V_CEO
V_EBO
I_C
I_CP
P_C
T_j
Storage Temperature Range
T_stg
RATING
-60
-50
-6
-3
-6
1
150
-55q150
UNIT
V
V
V
A
A
W


KTB985
EPITAXIAL PLANAR PNP TRANSISTOR
B
D
P
DEPTH:0.2
C
Q
K
F
F
H
H
M
E
123
HL
N
N
1. EMITTER
2. COLLECTOR
3. BASE
DIM MILLIMETERS
A
7.20 MAX
B
5.20 MAX
S
C
0.60 MAX
D
2.50 MAX
E
1.15 MAX
F
1.27
G
1.70 MAX
H
0.55 MAX
J
14.00+_ 0.50
K
H
L
0.35 MIN
0.75+_ 0.10
M
4
N
25
O
1.25
P
Φ1.50
Q
0.10 MAX
R
12.50 +_ 0.50
S
1.00
TO-92L
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
I_CBO
V_CB=-40V, I_E=0
I_EBO
V_EB=-4V, I_C=0
h_FE (1) (Note) V_CE=-2V, I_C=-100ɶ
h_FE (2)
V_CE=-2V, I_C=-3A
V_CE(sat)
I_C=-2A, I_B=-100ɶ
V_BE(sat)
I_C=-2A, I_B=-100ɶ
f_T
V_CE=-10V, I_C=-50ɶ
C_ob
V_CB=-10V, I_E=0, f=1ʀ
Switching
Time
Turn-on Time
Storage Time
PW=20µs
I _B1
t_on
DC <= 1%
R8
INPUT
IB2
25
VR
t_stg
50
100µF
470µF
Fall Time
t_f
5V
-25V
-10I_B1=10I_B2 =I _C =1A
Note : h_FE (1) Classification A:100q200, B:140q280, C:200q400
MIN.
-
-
100
35
-
-
-
-
TYP. MAX. UNIT.
-
-1
ɵ
-
-1
ɵ
-
400
-
-
-0.35 -0.7 V
-0.94 -1.2 V
150
-
ʀ
39
-
ʆ
-
70
-
-
450
-
nS
-
35
-
1999. 11. 30
Revision No : 1
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