KTB817B Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – TRIPLE DIFFUSED PNP TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION.
FEATURES
hComplementary to KTD1047B.
hRecommended for 60W Audio Frequency
Amplifier Output Stage.
KTB817B
TRIPLE DIFFUSED PNP TRANSISTOR
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Collector Power Dissipation (Tc=25)
Junction Temperature
Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CP
P_C
T_j
T_stg
RATING
-160
-140
-6
-12
-15
100
150
-55q150
UNIT
V
V
V
A
W


ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
I_CBO
Emitter Cut-off Current
I_EBO
DC Current Gain
h_FE (1) (Note)
h_FE 2
Collector-Emitter Saturation Voltage
V_CE(sat)
Base-Emitter Voltage
V_BE
Transition Frequency
f_T
Output Capacitance
C_ob
Turn On Time
t_on
Fall Time
t_f
Storage Time
t_stg
Note : h_FE(1) Classification O:60q120, Y:100q200
TEST CONDITION
V_CB=-80V, I_E=0
V_EB=-4V, I_C=0
V_CE=-5V, I_C=-1A
V_CE=-5V, I_C=-6A
I_C=-5A, I_B=-0.5A
V_CE=-5V, I_C=-1A
V_CE=-5V, I_C=-1A
V_CB=-10V, I_E=0, f=1MHz
V_CC=-20V
I_C=1A=10hI_B1=-10hI_B2
R_L=20ʃ
MIN.
-
-
60
20
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
15
300
0.25
0.53
1.61
MAX.
-0.1
-0.1
200
-2.5
-1.5
-
-
-
-
-
UNIT
mA
mA
V
V
MHz
pF
ǺS
2011. 3. 18
Revision No : 0
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