KTB772_15 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
AUDIO FREQUENCY POWER AMPLIFIER
LOW SPEED SWITCHING
FEATURES
hComplementary to KTD882.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
V_CBO
V_CEO
Emitter-Base Voltage
V_EBO
DC
I_C
Collector Current
Pulse (Note)
I_CP
Base Current (DC)
I_B
Collector Power ^Ta=25
P_C
Dissipation
Tc=25
Junction Temperature
T_j
Storage Temperature Range
T_stg
Note : Pulse Width ∔10mS, Duty Cycle∔50%.
RATING
-40
-30
-5
-3
-7
-0.6
1.5
10
150
-55q150
UNIT
V
V
V
A
A
W


KTB772
EPITAXIAL PLANAR PNP TRANSISTOR
A
B
C
H
J
K
D
E
F
G
L
M
O
N
P
12 3
1. EMITTER
2. COLLECTOR
3. BASE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
MILLIMETERS
8.3 MAX
5.8
0.7
Φ3.2+_ 0.1
3.5
11.0 +_ 0.3
2.9 MAX
1.0 MAX
1.9 MAX
0.75 +_ 0.15
15.50+_ 0.5
2.3 +_ 0.1
0.65 +_ 0.15
1.6
3.4 MAX
TO-126
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter-Cut-off Current
DC Current Gain
*
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage
*
Current Gain Bandwidth Product
I_CBO
I_EBO
h_FE(1)
h_FE(2) (Note)
V_CE(sat)
V_BE(sat)
f_T
V_CB=-30V, I_E=0
V_EB=-3V, I_C=0
V_CE=-2V, I_C=-20mA
V_CE=-2V, I_C=-1A
I_C=-2A, I_B=-0.2A
I_C=-2V, I_B=-0.2A
V_CE=-5V, I_C=-0.1A
Collector Output Capacitance
C_ob
V_CB=-10V, I_E=0, f=1MHz
* Pulse Test : Pulse Width†350ǺS, Duty Cycle†2% Pulsed
Note: h_FE(2) Classification O:100q200 , Y:160q320 , GR:200q400
MIN.
-
-
30
100
-
-
-
-
TYP.
-
-
220
160
-0.3
-1.0
80
55
MAX.
-1
-1
-
400
-0.5
-2.0
-
-
UNIT
ǺA
ǺA
V
V
MHz
pF
2003. 7. 24
Revision No : 4
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