KTB764 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – TRIPLE DIFFUSED PNP TRANSISTOR(VOLTAGE REGULATOR, RELAY, RAMP DRIVER, INDUSTRIAL USE)

SEMICONDUCTOR
TECHNICAL DATA
VOLTAGE REGULATOR, RELAY,
RAMP DRIVER, INDUSTRIAL USE
FEATURES
ᴌHigh Voltage : V_CEO=-50V(Min.).
ᴌHigh Current : I_C(Max.)=-1A.
ᴌHigh Transition Frequency : f_T=150MHz(Typ.).
ᴌWide Area of Safe Operation.
ᴌComplementary to KTD863.
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CP
P_C
T_j
T_stg
RATING
-60
-50
-5
-1
-2
1
150
-55ᴕ150
UNIT
V
V
V
A
W
á´±
á´±
KTB764
TRIPLE DIFFUSED PNP TRANSISTOR
B
D
P
DEPTH:0.2
C
Q
K
F
F
H
H
M
E
123
HL
N
N
1. EMITTER
2. COLLECTOR
3. BASE
DIM MILLIMETERS
A
7.20 MAX
B
5.20 MAX
S
C
0.60 MAX
D
2.50 MAX
E
1.15 MAX
F
1.27
G
1.70 MAX
H
0.55 MAX
J
14.00+_ 0.50
H
K
L
0.35 MIN
0.75+_ 0.10
M
4
N
25
O
1.25
P
Φ1.50
Q
0.10 MAX
R
12.50 +_ 0.50
S
1.00
TO-92L
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
I_CBO
I_EBO
h_FE(1)
h_FE(2)
V_(BR)CEO
V_CE(sat)
V_BE(sat)
f_T
V_CB=-50V, I_E=0
V_EB=-4V, I_C=0
V_CE=-2V, I_C=-50mA
V_CE=-2V, I_C=-1A
I_C=-1mA, I_B=0
I_C=-500mA, I_B=-50mA
I_C=-500mA, I_B=-50mA
V_CE=-10V, I_C=-50mA
Collector Output Capacitance
C_ob
V_CB=-10V, I_E=0, f=1MHz
Note : h_FE(1) Classification O:60ᴕ120, Y:100ᴕ200, GR:160ᴕ320
MIN.
-
-
60
30
-50
-
-
-
-
TYP.
-
-
-
-
-
-0.2
-0.85
150
20
MAX.
-1
-1
320
-
-
-0.7
-1.2
-
-
UNIT
ỌA
ỌA
V
V
V
MHz
pF
1999. 11. 30
Revision No : 2
1/3