KTB688B Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – TRIPLE DIFFUSED PNP TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION.
FEATURES
Recommended for 45 50W Audio Frequency Amplifier Output Stage.
Complementary to KTD718B.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation (Tc=25 )
Junction Temperature
Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
RATING
-120
-120
-5
-10
-1
80
150
-55 150
UNIT
V
V
V
A
A
W
KTB688B
TRIPLE DIFFUSED PNP TRANSISTOR
A
N
Q
O
B
K
D
E
d
PP
123
1. BASE
DIM MILLIMETERS
A 15.60 +_ 0.20
B 4.80 +_ 0.20
C 19.90 +_ 0.20
D 2.00 +_ 0.20
d
1.00 +_ 0.20
E 3.00 +_ 0.20
F
3.80 +_ 0.20
G 3.50 +_ 0.20
H
I
MJ
13.90 +_ 0.20
12.76 +_ 0.20
23.40 +_ 0.20
K 1.5+0.15-0.05
L 16.50 +_ 0.30
T
M
1.40 +_ 0.20
N 13.60 +_ 0.20
O
9.60 +_ 0.20
P
5.45 +_ 0.30
Q
3.20 +_ 0.10
R 18.70 +_ 0.20
T 0.60+0.15-0.05
2. COLLECTOR (HEAT SINK)
3. EMITTER
TO-3P(N)-E
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
I_CBO
Emitter Cut-off Current
I_EBO
Collector-Emitter Breakdown Voltage
V_(BR)CEO
DC Current Gain
h_FE (Note)
Collector-Emitter Saturation Voltage
V_CE(sat)
Base-Emitter Voltage
V_BE
Transition Frequency
f_T
Collector Output Capacitance
C_ob
Note : h_FE Classification R:55 110, O:80 160
TEST CONDITION
V_CB=-120V, I_E=0
V_EB=-5V, I_C=0
I_C=-50mA, I_B=0
V_CE=-5V, I_C=-1A
I_C=-5A, I_B=-0.5A
V_CE=-5V, I_C=-5A
V_CE=-5V, I_C=-1A
V_CB=-10V, I_E=0, f=1MHz
MIN.
-
-
-120
55
-
-
-
-
TYP.
-
-
-
-
-
-
10
280
MAX.
-10
-10
-
160
-2.5
-1.5
-
-
UNIT
A
A
V
V
V
MHz
pF
2005. 3. 14
Revision No : 1
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