KTB598 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (LOW FREQUENCY POWER AMP, CONVERTER ELECTRONIC GOVERNOR)

SEMICONDUCTOR
TECHNICAL DATA
LOW FREQUENCY POWER AMP, CONVERTER
ELECTRONIC GOVERNOR APPLICATIONS
FEATURES
ᴌLow Saturation Voltage
: V_CE(sat)=-0.3V(Max.) at I_C=-0.5A.
ᴌComplementary to KTD545.
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
RATING
-30
-25
-5
-1
625
150
-55ᴕ150
UNIT
V
V
V
A
mW
á´±
á´±
KTB598
EPITAXIAL PLANAR PNP TRANSISTOR
B
C
K
E
G
D
H
F
F
1 23
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
I_CBO
V_CB=-20V, I_E=0
Emitter Cut-off Current
I_EBO
V_EB=-5V, I_C=0
DC Current Gain
h_FE(1) (Note)
h_FE(2)
V_CE=-2V, I_C=-50mA
V_CE=-2V, I_C=-1A(Pulse)
Collector-Emitter Saturation Voltage
V_CE(sat)
I_C=-500mA, I_B=-50mA
Base-Emitter Saturation Voltage
V_BE(sat)
I_C=-500mA, I_B=-50mA
Transition Frequency
f_T
V_CE=-10V, I_C=-50mA
Collector Output Capacitance
C_ob
V_CB=-10V, I_E=0, f=1MHz
Note : h_FE Classification O:70ᴕ140, Y:120ᴕ240, GR:200ᴕ400
MIN.
-
-
70
30
-
-
-
-
TYP.
-
-
-
-
-0.15
-0.85
180
25
MAX.
-0.1
-0.1
400
-
-0.3
-1.2
-
-
UNIT
ỌA
ỌA
V
V
MHz
pF
1999. 8. 7
Revision No : 1
1/2