KTB2530 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER
DARLINGTON APPLICATION.
FEATURES
hComplementary to KTD1530
hRecommended for 80W Audio Amplifier Output Stage.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation (Tc=25)
Junction Temperature
Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
RATING
-160
-150
-5
-10
-1
100
150
-55q150
UNIT
V
V
V
A
A
W


KTB2530
EPITAXIAL PLANAR PNP TRANSISTOR
A
N
Q
O
D
E
d
PP
123
B
K
DIM MILLIMETERS
A 15.60 +_ 0.20
B 4.80 +_ 0.20
C 19.90 +_ 0.20
D 2.00 +_ 0.20
d
1.00 +_ 0.20
E 3.00 +_ 0.20
F 3.80 +_ 0.20
G 3.50 +_ 0.20
H 13.90 +_ 0.20
I 12.76 +_ 0.20
J 23.40 +_ 0.20
M _{K 1.5+0.15-0.05}
L 16.50 +_ 0.30
M 1.40 +_ 0.20
T
N 13.60 +_ 0.20
O
9.60 +_ 0.20
P
5.45 +_ 0.30
Q
3.20 +_ 0.10
R 18.70 +_ 0.20
T 0.60+0.15-0.05
TO-3P(N)-E
EQUIVALENT CIRCUIT
EMITTER
70Ω
BASE
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
I_CBO
Emitter Cut-off Current
I_EBO
Collector-Emitter Breakdown Voltage
V_(BR)CEO
DC Current Gain
h_FE
Collector-Emitter Saturation Voltage
V_CE(sat)
Base-Emitter Saturation Voltage
V_BE(sat)
Transition Frequency
f_T
Collector Output Capacitance
C_ob
TEST CONDITION
V_CB=-160V, I_E=0
V_EB=-5V, I_C=0
I_C=-30mA, I_B=0
V_CE=-4V, I_C=-7A
I_C=-7A, I_B=-7mA
I_C=-7A, I_B=-7mA
V_CE=-12V, I_C=-2A
V_CB=-10V, I_E=0, f=1MHz
COLLECTOR
MIN.
-
-
-150
15,000
-
-
-
-
TYP.
-
-
-
-
-
-
50
230
MAX.
-100
-100
-
30,000
-2.5
-3.0
-
-
UNIT
ǺA
ǺA
V
V
V
MHz
pF
2012. 8. 21
Revision No : 0
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