KTB2510_15 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER
DARLINGTON APPLICATION.
FEATURES
hComplementary to KTD1510
hRecommended for 60W Audio Amplifier Output Stage.
KTB2510
EPITAXIAL PLANAR PNP TRANSISTOR
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation (Tc=25)
Junction Temperature
Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
RATING
-160
-150
-5
-10
-1
100
150
-55q150
UNIT
V
V
V
A
A
W


EQUIVALENT CIRCUIT
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
I_CBO
Emitter Cut-off Current
I_EBO
Collector-Emitter Breakdown Voltage
V_(BR)CEO
DC Current Gain
h_FE
Collector-Emitter Saturation Voltage
V_CE(sat)
Base-Emitter Saturation Voltage
V_BE(sat)
Transition Frequency
f_T
Collector Output Capacitance
C_ob
TEST CONDITION
V_CB=-160V, I_E=0
V_EB=-5V, I_C=0
I_C=-30mA, I_B=0
V_CE=-4V, I_C=-7A
I_C=-7A, I_B=-7mA
I_C=-7A, I_B=-7mA
V_CE=-12V, I_C=-2A
V_CB=-10V, I_E=0, f=1MHz
MIN.
-
-
-150
5000
-
-
-
-
TYP.
-
-
-
12000
-
-
50
230
MAX.
-100
-100
-
20000
-2.5
-3.0
-
-
UNIT
ǺA
ǺA
V
V
V
MHz
pF
2008. 4. 21
Revision No : 2
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