KTB1423_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
KTB1423
EPITAXIAL PLANAR PNP TRANSISTOR
SWITCHING APPLICATIONS.
HAMMER DRIVER, PULSE MOTOR DRIVER
APPLICATIONS.
FEATURES
High DC Current Gain : h_FE=1000(Min.) at V_CE=-3V, I_C=-3A.
High Collector Breakdown Voltage : V_CEO=-120V (Min.)
Complementary to KTD1413.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pules
Base Current
Collector Power Dissipation
(Tc=25 )
Junction Temperature
V_CBO
V_CEO
V_EB0
I_C
I_CP
I_B
P_C
T_j
Storage Temperature Range
T_stg
RATING
-120
-120
-5
-5
-8
-0.12
30
150
-55 150
UNIT
V
V
V
A
A
W
A
S
E
L
L
M
D
D
NN
C
DIM MILLIMETERS
A
10.0+_ 0.3
B
15.0+_ 0.3
C
2.70 +_ 0.3
D 0.76+0.09/-0.05
E
Φ3.2 +_ 0.2
F
3.0+_ 0.3
G
12.0+_ 0.3
H
0.5+0.1/-0.05
J
13.6 +_ 0.5
R
K
3.7+_ 0.2
L
1.2+0.25/-0.1
M
1.5+0.25/-0.1
N
2.54 +_ 0.1
P
6.8+_ 0.1
Q
4.5 +_ 0.2
R
2.6 +_0.2
H
S
0.5 Typ
123
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
EQUIVALENT CIRCUIT
C
B
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
I_CBO
Emitter Cut-off Current
I_EBO
Collector-Emitter Breakdown Voltage
V_(BR)CEO
DC Current Gain
h_FE(1)
h_FE(2)
Collector-Emitter Saturation Voltage
V_CE(sat) 1
V_CE(sat) 2
Base-Emitter Voltage
V_BE
Output Capacitance
C_ob
TEST CONDITION
V_CB=-100V, I_E=0
V_BE=-5V, I_C=0
I_C=-10mA, I_B=0
V_CE=-3V, I_C=-0.5A
V_CE=-3V, I_C=-3A
I_C=-3A, I_B=-12mA
I_C=-5A, I_B=-20mA
V_CE=-3V, I_C=-3A
V_CB=-10V, I_E=0, f=1MHz
R1
=∼ 8kΩ
R₂
=∼120Ω
E
MIN.
-
-
-120
1000
1000
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
MAX.
-1
-2
-
-
-
-2
-4
-2.5
300
UNIT
mA
mA
V
V
V
pF
2007. 5. 21
Revision No : 2
1/2