KTB1370_15 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – TRIPLE DIFFUSED PNP TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
KTB1370
TRIPLE DIFFUSED PNP TRANSISTOR
HIGH CURRENT SWITCHING APPLICATIONS.
POWER AMPLIFIER APPLICATIONS.
FEATURES
High Collector Current : I_C=-7A.
Low Collector-Emitter Saturation Voltage.
: V_CE(sat)=-0.5V(Max.) at I_C=-4A.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation (Tc=25 )
Junction Temperature
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
Storage Temperature Range
T_stg
RATING
-100
-80
-5
-7
-1
30
150
-55 150
UNIT
V
V
V
A
A
W
A
S
E
L
L
M
D
D
NN
C
DIM MILLIMETERS
A
10.0+_ 0.3
B
15.0+_ 0.3
C
2.70 +_ 0.3
D 0.76+0.09/-0.05
E
Φ3.2 +_ 0.2
F
3.0+_ 0.3
G
12.0+_ 0.3
H
0.5+0.1/-0.05
J
13.6 +_ 0.5
R
K
3.7+_ 0.2
L
1.2+0.25/-0.1
M
1.5+0.25/-0.1
N
2.54 +_ 0.1
P
6.8+_ 0.1
Q
4.5 +_ 0.2
R
2.6 +_0.2
H
S
0.5 Typ
123
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
I_CBO
I_EBO
V_(BR)CEO
h_FE(1) (Note)
h_FE(2)
V_CE(sat)
V_BE(sat)
f_T
C_ob
V_CB=-100V, I_E=0
V_EB=-5V, I_C=0
I_C=-50mA, I_B=0
V_CE=-1V, I_C=-1A
V_CE=-1V, I_C=-4A
I_C=-4A, I_B=-0.4A
I_C=-4A, I_B=-0.4A
V_CE=-4V, I_C=-1A
V_CB=-10V, I_E=0, f=1MHz
Switching
Time
Turn-On Time
t_on
I_B2
I_B2
OUTPUT
Storage Time
t_stg
-I _B1
10Ω
I_B1
20µs
Fall Time
t_f
-I_B1=I_B2=0.3A
DUTY CYCLE ^<= 1%
V_CC =-30V
Note : h_FE(1) Classification O:70 140 , Y:120 240
MIN.
-
-
-80
70
30
-
-
-
-
TYP.
-
-
-
-
-
-0.3
-0.9
10
250
MAX.
-5
-5
-
240
-
-0.5
-1.4
-
-
UNIT
A
A
V
V
V
MHz
pF
-
0.4
-
-
2.5
-
S
-
0.5
-
2007. 5. 21
Revision No : 2
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