KTB1367_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – TRIPLE DIFFUSED PNP TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
KTB1367
TRIPLE DIFFUSED PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
FEATURES
Low Collector-Emitter Saturation Voltage
: V_CE(sat)=-2.0V(Max.).
Complementary to KTD2059.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation (Tc=25 )
Junction Temperature
Storage Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C
T_j
T_stg
RATING
-100
-100
-5
-5
-0.5
30
150
-55 150
UNIT
V
V
V
A
A
W
A
S
E
L
L
M
D
D
NN
C
DIM MILLIMETERS
A
10.0+_ 0.3
B
15.0+_ 0.3
C
2.70 +_ 0.3
D 0.76+0.09/-0.05
E
Φ3.2 +_ 0.2
F
3.0+_ 0.3
G
12.0+_ 0.3
H
0.5+0.1/-0.05
J
13.6 +_ 0.5
R
K
3.7+_ 0.2
L
1.2+0.25/-0.1
M
1.5+0.25/-0.1
N
2.54 +_ 0.1
P
6.8+_ 0.1
Q
4.5 +_ 0.2
R
2.6 +_0.2
H
S
0.5 Typ
123
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
I_CBO
V_CB=-100V, I_E=0
Emitter Cut-off Current
I_EBO
V_EB=-5V, I_C=0
Collector-Emitter Breakdown Voltage
V_(BR)CEO
I_C=-50mA, I_B=0
DC Current Gain
h_FE(1) (Note)
h_FE(2)
V_CE=-5V, I_C=-1A
V_CE=-5V, I_C=-4A
Collector-Emitter Saturation Voltage
V_CE(sat)
I_C=-4A, I_B=-0.4A
Base-Emitter Voltage
V_BE
V_CE=-5V, I_C=-4A
Transition Frequency
f_T
V_CE=-5V, I_C=-1A
Collector Output Capacitance
C_ob
V_CB=-10V, I_E=0, f=1MHz
Note : h_FE(1) Classification R:40 80, O:70 140, Y:120 240
MIN.
-
-
-100
40
20
-
-
-
-
TYP.
-
-
-
-
-
-
-
5.0
270
MAX.
-100
-1
-
240
-
-2.0
-1.5
-
-
UNIT
A
mA
V
V
V
MHz
pF
2007. 5. 21
Revision No : 2
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