KTB1366_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – TRIPLE DIFFUSED PNP TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
KTB1366
TRIPLE DIFFUSED PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
FEATURES
Low Collector Saturation Voltage
: V_CE(sat)=-1.0V(Max.) at I_C=-2A, I_B=-0.2A.
Collector Power Dissipation
: P_C=25W (Tc=25 )
Complementary to KTD2058.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
V_CBO
V_CEO
V_EBO
I_C
I_B
Collector Power
Ta=25
P_C
Dissipation
Tc=25
Junction Temperature
T_j
Storage Temperature Range
T_stg
RATING
-60
-60
-7
-3
-0.5
2
25
150
-55 150
UNIT
V
V
V
A
A
W
A
S
E
L
L
M
D
D
NN
C
DIM MILLIMETERS
A
10.0+_ 0.3
B
15.0+_ 0.3
C
2.70 +_ 0.3
D 0.76+0.09/-0.05
E
Φ3.2 +_ 0.2
F
3.0+_ 0.3
G
12.0+_ 0.3
H
0.5+0.1/-0.05
J
13.6 +_ 0.5
R
K
3.7+_ 0.2
L
1.2+0.25/-0.1
M
1.5+0.25/-0.1
N
2.54 +_ 0.1
P
6.8+_ 0.1
Q
4.5 +_ 0.2
R
2.6 +_0.2
H
S
0.5 Typ
123
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
I_CBO
I_EBO
V_(BR)CEO
DC Current Gain
h_FE(1) (Note)
h_FE(2)
Collector Emitter Saturation Voltage
V_CE(sat)
Base-Emitter Voltage
V_BE
Transition Frequency
f_T
Collector Output Capacitance
C_ob
Turn-on Time
t_on
Switching
Storage Time
t_stg
Time
Fall Time
t_f
Note : h_FE(1) Classification O:60 120, Y:100 200
TEST CONDITION
V_CB=-60V, I_E=0
V_EB=-7V, I_C=0
I_C=-50mA, I_B=0
V_CE=-5V, I_C=-0.5A
V_CE=-5V, I_C=-3A
I_C=-2A, I_B=-0.2A
V_CE=-5V, I_C=-0.5A
V_CE=-5V, I_C=-0.5A
V_CB=-10V, I_E=0, f=1MHz
0
I _B2
I_B1
INPUT
I_B1
I_B2
20µsec
-I_B1=I_B2=0.2A
DUTY CYCLE ^<= 1%
OUTPUT
15Ω
V_CC =-30V
MIN.
-
-
-60
60
20
-
-
-
-
TYP.
-
-
-
-
-
-0.25
-0.7
9
150
MAX. UNIT
-100
A
-100
A
-
V
200
-
-1.0
V
-1.0
V
-
MHz
-
pF
-
0.4
-
-
1.7
-
S
-
0.5
-
2007. 5. 21
Revision No : 4
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