KTB1260_15 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURES
1W (Mounted on Ceramic Substrate).
Small Flat Package.
Complementary to KTD1898.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
V_CBO
V_CEO
V_EBO
I_C
I_E
P_C
P_C*
T_j
Storage Temperature Range
T_stg
* Mounted on ceramic substrate(250mm² 0.8t)
RATING
-80
-80
-5
-1
1
500
1
150
-55 150
UNIT
V
V
V
A
A
mW
W
KTB1260
EPITAXIAL PLANAR PNP TRANSISTOR
A
C
H
G
D
D
K
FF
1 23
DIM
A
B
C
D
E
F
G
H
J
K
MILLIMETERS
4.70 MAX
2.50 +_0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
1.50+_ 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
SOT-89
Marking
h_FE Rank
Lot No.
Type Name
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
I_CBO
V_CB=-60V, I_E=0
Emitter Cut-off Current
I_EBO
V_EB=-4V, I_C=0
Collector-Emitter Breakdown Voltage
V_(BR)CEO
I_C=-1mA, I_B=0
DC Current Gain
h_FE(Note) V_CE=-3V, I_C=-100mA
Collector-Emitter Saturation Voltage
V_CE(sat)
I_C=-500mA, I_B=-50mA
Transition Frequency
f_T
V_CE=-5V, I_C=-50mA, f=30MHz
Collector Output Capacitance
C_ob
V_CB=-10V, I_E=0, f=1MHz
Note : h_FE Classification O:70 140, Y:120 240, GR:200 400
MIN.
-
-
-80
70
-
-
-
TYP.
-
-
-
-
-
100
25
MAX.
-1
-1
-
400
-0.4
-
-
UNIT
A
A
V
V
MHz
pF
2003. 12. 12
Revision No : 2
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