KTB1241_15 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURE
ᴌHigh Breakdown Voltage and High Current
: V_CEO=-80V, I_C=-1A.
ᴌLow V_CE(sat)
ᴌComplementary to KTD1863.
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
V_CBO
V_CEO
V_EBO
I_C
I_E
P_C
T_j
T_stg
RATING
-80
-80
-5
-1
1
1
150
-55ᴕ150
UNIT
V
V
V
A
A
W
á´±
á´±
KTB1241
EPITAXIAL PLANAR PNP TRANSISTOR
B
D
P
DEPTH:0.2
C
Q
K
F
F
H
H
M
E
123
HL
N
N
1. EMITTER
2. COLLECTOR
3. BASE
DIM MILLIMETERS
A
7.20 MAX
B
5.20 MAX
S
C
0.60 MAX
D
2.50 MAX
E
1.15 MAX
F
1.27
G
1.70 MAX
H
0.55 MAX
J
14.00+_ 0.50
H
K
L
0.35 MIN
0.75+_ 0.10
M
4
N
25
O
1.25
P
Φ1.50
Q
0.10 MAX
R
12.50 +_ 0.50
S
1.00
TO-92L
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter-Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
I_CBO
I_EBO
V_(BR)CEO
h_FE (Note)
V_CE(sat)
f_T
V_CB=-60V, I_E=0
V_EB=-4V, I_C=0
I_C=-1mA, I_B=0
V_CE=-3V, I_C=-100mA
I_C=-500mA, I_B=-50mA
V_CE=-5V, I_C=-50mA, f=30MHz
Collector Output Capacitance
C_ob
V_CB=-10V, I_E=0, f=1MHz
Note : h_FE Classification O:70ᴕ140, Y:120ᴕ240, GR:200ᴕ400
MIN.
-
-
-80
70
-
-
-
TYP.
-
-
-
-
-
100
25
MAX.
-1
-1
-
400
-0.4
-
-
UNIT
ỌA
ỌA
V
V
MHz
pF
1998. 8. 21
Revision No : 1
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