KTB1234T Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
DRIVER APPLICATIONS.
FEATURES
ᴌAF amplifier, solenoid drivers, LED drivers.
ᴌDarlington connection.
ᴌHigh DC current gain.
ᴌVery small-sized package permitting sets to be made
smaller and slimer.
ᴌComplementary to KTD1854T.
MAXIMUM RATINGS (Ta=25á´±)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Collector Power Dissipation
Junction Temperature
V_CBO
V_CEO
V_EBO
I_C
I_CP
P_C *
T_j
-80
-50
-10
-200
-400
0.9
150
Storage Temperature Range
T_stg
-55ᴕ150
* Package mounted on a ceramic board (600Ὅᴧ0.8Ὂ)
UNIT
V
V
V
mA
W
á´±
á´±
EQUIVALENT CIRCUIT
COLLECTOR
BASE
KTB1234T
EPITAXIAL PLANAR PNP TRANSISTOR
E
K
B
2
3
1
DIM
A
B
C
D
E
F
G
H
I
J
K
L
MILLIMETERS
2.9 +_0.2
1.6+0.2/-0.1
0.70+_ 0.05
0.4+_ 0.1
2.8+0.2/-0.3
1.9+_ 0.2
0.95
0.16+_ 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
H
J
J
1. EMITTER
2. BASE
3. COLLECTOR
TSM
Marking
S Y ^{Type Name}
Lot No.
EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
I_CBO
I_EBO
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
h_FE 1
h_FE 2
V_CE(sat)
Base-Emitter Saturation Voltage
V_BE(sat)
TEST CONDITION
V_CB=-60V, I_E=0
V_EB=-8V, I_C=0
I_C=-10ỌA, I_E=0
I_C=-1mA, I_B=0
I_C=-10ỌA, I_C=0
V_CE=-2V, I_C=-10mA
V_CE=-2V, I_C=-100mA
I_C=-100mA, I_B=-100ỌA
I_C=-100mA, I_B=-100ỌA
2001. 10. 23
Revision No : 0
MIN.
-
-
-80
-50
-10
5000
3000
-
-
TYP.
-
-
-
-
-0.9
-1.5
MAX.
-100
-100
-
-
-1.5
-2.0
UNIT
nA
nA
V
V
V
V
V
1/2