KTB1151_15 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
LOW COLLECTOR SATURATION VOLTAGE
LARGE CURRENT
FEATURES
High Power Dissipation : P_C=1.5W(Ta=25 )
Complementary to KTD1691.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse *
Base Current
V_CBO
V_CEO
V_EBO
I_C
I_CP
I_B
Collector Power
Dissipation
Ta=25
Tc=25
P_C
Junction Temperature
T_j
Storage Temperature Range
T_stg
* PW 10ms, Duty Cycle 50%
RATING
-60
-60
-7
-5
-8
-1
1.5
20
150
-55 150
UNIT
V
V
V
A
A
W
KTB1151
EPITAXIAL PLANAR PNP TRANSISTOR
A
B
C
H
J
K
D
E
F
G
L
M
O
N
P
12 3
1. EMITTER
2. COLLECTOR
3. BASE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
MILLIMETERS
8.3 MAX
5.8
0.7
Φ3.2+_ 0.1
3.5
11.0 +_ 0.3
2.9 MAX
1.0 MAX
1.9 MAX
0.75 +_ 0.15
15.50+_ 0.5
2.3 +_ 0.1
0.65 +_ 0.15
1.6
3.4 MAX
TO-126
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
*
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage *
I_CBO
I_EBO
h_FE 1
h_FE2 (Note)
h_FE 3
V_CE(sat)
V_BE(sat)
TEST CONDITION
V_CB=-50V, I_E=0
V_EB=-7V, I_C=0
V_CE=-1V, I_C=-0.1A
V_CE=-1V, I_C=-2A
V_CE=-2V, I_C=-5A
I_C=-2A, I_B=-0.2A
I_C=-2A, I_B=-0.2A
Switching
Time
Turn On Time
Storage Time
t_on
0
I _B2
INPUT
I_B1
t_stg
I_B1
I_B2
20µsec
Fall Time
t_f
-I_B1=I_B2=0.2A
DUTY CYCLE ^<= 1%
* Pulse test : PW 350 S, Duty Cycle 2% Pulse
Note) h_FE(2) Classification : O:160 320, Y:200 400.
OUTPUT
V_CC =-10V
MIN.
-
-
60
160
50
-
-
-
TYP.
-
-
-
-
-
-0.14
-0.9
MAX.
-10
-10
-
400
-
-0.3
-1.2
UNIT
A
A
V
V
0.15
1
-
0.78
2.5
S
-
0.18
1
2003. 7. 24
Revision No : 2
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