KTA712U Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
ᴌA super-minimold package houses 2 transistor.
ᴌExcellent temperature response between these 2 transistor.
ᴌHigh pairing property in h_FE.
ᴌThe follwing characteristics are common for Q₁, Q₂.
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C *
T_j
Storage Temperature Range
T_stg
* Total Rating
RATING
-50
-50
-5
-150
-30
200
150
-55ᴕ150
UNIT
V
V
V
mA
mA
mW
á´±
á´±
KTA712U
EPITAXIAL PLANAR PNP TRANSISTOR
B
B1
1
6
DIM MILLIMETERS
A
2.00+_ 0.20
2
5
A1
1.3+_ 0.1
B
2.1+_ 0.1
3
4 D _B1
1.25+_ 0.1
C
0.65
D
0.2+0.10/-0.05
G
0-0.1
H
0.9+_ 0.1
T
T
0.15+0.1/-0.05
G
1. Q1 EMITTER
2. Q₁ BASE
3. Q₂ BASE
4. Q₂ COLLECTOR
5. Q₂ EMITTER
6. Q₁ COLLECTOR
US6
EQUIVALENT CIRCUIT (TOP VIEW)
6
5
4
Q1
Q2
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
I_CBO
V_CB=-50V, I_E=0
Emitter Cut-off Current
I_EBO
V_EB=-5V, I_C=0
DC Current Gain
h_FE (Note) V_CE=-6V, I_C=-2Ὠ
Collector-Emitter Saturation Voltage
V_CE(sat)
I_C=-100Ὠ, I_B=-10Ὠ
Transition Frequency
f_T
V_CE=-10V, I_C=-1Ὠ
Collector Output Capacitance
C_ob
V_CB=-10V, I_E=0, f=1á½²
Noise Figure
NF
V_CE=-6V, I_C=-0.1Ὠ, f=1ά, Rg=10ὶ
Note : h_FE Classification Y(4):120ᴕ240, GR(6):200ᴕ400
Marking
6
1
2
3
MIN.
-
-
120
-
80
-
-
TYP.
-
-
-
-0.1
-
4
1.0
MAX.
-0.1
-0.1
400
-0.30
-
7
10
Type Name
5
4
UNIT.
ὧ
ὧ
V
á½²
ὸ
὘
F
h_FE Rank
2002. 1. 7
Revision No : 0
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