KTA708 Datasheet, PDF (1/3 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (VOLTAGE REGULATOR RELAY RAMP DRIVER, INDUSTRIAL USE)

SEMICONDUCTOR
TECHNICAL DATA
VOLTAGE REGULATOR, RELAY,
LAMP DRIVER, INDUSTRIAL USE
FEATURES
High Voltage : V_CEO=-60V(Min.).
High Current : I_C(Max.)=-1A.
High Transition Frequency : f_T=150MHz(Typ.).
Wide Area of Safe Operation.
Complementary to KTC1008.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL RATING
V_CBO
-80
V_CEO
-60
V_EBO
-5
I_C
-1
I_CP
-2
P_C
625
T_j
150
T_stg
-55¡›150
UNIT
V
V
V
A
mW
KTA708
EPITAXIAL PLANAR PNP TRANSISTOR
B
C
K
E
G
D
H
F
F
1 23
N DIM MILLIMETERS
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
E
1.00
F
1.27
G
0.85
H
0.45
J
14.00 +_0.50
K
0.55 MAX
L
2.30
M
0.45 MAX
N
1.00
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25¡ )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
I_CBO
I_EBO
h_FE(1)
h_FE(2)
V_(BR)CEO
V_CE(sat)
V_BE(sat)
f_T
Collector Output Capacitance
C_ob
Note : h_FE(1) Classification O:60 120, Y:100 200
TEST CONDITION
V_CB=-50V, I_E=0
V_EB=-4V, I_C=0
V_CE=-2V, I_C=-50mA
V_CE=-2V, I_C=-1A
I_C=-1mA, I_B=0
I_C=-500mA, I_B=-50mA
I_C=-500mA, I_B=-50mA
V_CE=-10V, I_C=-50mA
V_CB=-10V, I_E=0, f=1MHz
MIN.
-
-
60
30
-60
-
-
-
-
TYP.
-
-
-
-
-
-0.2
-0.85
150
12
MAX.
-100
-100
200
-
-
-0.7
-1.2
-
-
UNIT
nA
nA
V
V
V
MHz
pF
2010. 3. 24
Revision No : 3
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