KTA511T Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
ᴌExcellent h_FE Linearity
: h_FE(2)=25(Min.) at V_CE=-6V, I_C=-400mA.
ᴌComplementary to KTC611T.
MAXIMUM RATING (Ta=25á´±)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
V_CBO
V_CEO
V_EBO
I_C
I_E
P_C *
T_j
T_stg
-35
-30
-5
-500
500
0.9
150
-55ᴕ150
* Package mounted on a ceramic board (600Ὅᴧ0.8Ὂ)
UNIT
V
V
V
mA
mA
W
á´±
á´±
KTA511T
EPITAXIAL PLANAR PNP TRANSISTOR
E
B
1
5
2
3
4
DIM
A
B
C
D
E
F
G
H
I
J
K
L
MILLIMETERS
2.9+_ 0.2
1.6+0.2/-0.1
0.70+_ 0.05
0.4+_ 0.1
2.8+0.2/-0.3
1.9+_ 0.2
0.95
0.16+_ 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
H
J
J
1. Q₁ BASE
2. Q₁, Q ₂ EMITTER
3. Q ₂ BASE
4. Q ₂ COLLECTOR
5. Q ₁ COLLECTOR
TSV
EQUIVALENT CIRCUIT(TOP VIEW)
5
4
Q1
Q2
ELECTRICAL CHARACTERISTICS (Ta=25á´±)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
I_CBO
Emitter Cut-off Current
I_EBO
DC Current Gain
h_FE(1) (Note)
h_FE(2) (Note)
Collector-Emitter Saturation Voltage
V_CE(sat)
Base-Emitter Voltage
V_BE
Transition Frequency
f_T
Collector Output Capacitance
C_ob
Note : h_FE(1) Classification 0:70ᴕ140, Y:120ᴕ240
h_FE(2) Classification 0:25Min., Y:40Min.
1
2
3
TEST CONDITION
V_CB=-35V, I_E=0
V_EB=-5V, I_C=0
V_CE=-1V, I_C=-100mA
V_CE=-6V, I_C=-400mA
I_C=-100mA, I_B=-10mA
V_CE=-1V, I_C=-100mA
V_CE=-6V, I_C=-20mA
V_CB=-6V, I_E=0, f=1MHz
MIN.
-
-
70
25
-
-
-
-
TYP.
-
-
-
-
-0.1
-0.8
200
13
MAX.
-0.1
-0.1
240
-
-0.25
-1.0
-
-
UNIT
ỌA
ỌA
V
V
MHz
pF
Marking
5
h_FE Rank
Type Name
S
4
Lot No.
1
2
3
2002. 1. 24
Revision No : 1
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